Nanoimprint lithography manufacturing equipment utilizes a patterning technology that involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. The technology faithfully reproduces patterns with a higher resolution and greater uniformity compared to those produced by photolithography equipment. Additionally, as this technology does not require an array of widediameter lenses and the expensive light sources necessary for advanced photolithography equipment, NIL equipment achieves a simpler, more compact design, allowing for multiple units to be clustered together for increased productivity. In this paper, we review the progress and status of the FPA-1200NZ2C wafer imprint system and FPA-1100NR2 mask replication system. To address high volume manufacturing concerns, an FPA-1200NZ2C four-station cluster tool is used in order to meet throughput and cost of ownership requirements (CoO). Throughputs of up to 90 wafers per hour were achieved by applying a multi-field dispense method. Mask life of up to 125 lots, using a contact hole test mask were demonstrated. A mix and match overlay of 3.4 nm has also been achieved and a single machine overlay across the wafer of 2.1nm in X, 1.9nm in Y was also demonstrated. In addition, data is also presented on mask replication. Critical elements of a replication platform include image placement (IP) accuracy and critical dimension uniformity (CDU). Data is presented on both of these subjects. With respect to image placement, an IP accuracy (after removing correctables) of 0.8nm in X, 1.0nm in Y has been demonstrated.
Nanoimprint lithography manufacturing equipment utilizes a patterning technology that involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. The technology faithfully reproduces patterns with a higher resolution and greater uniformity compared to those produced by photolithography equipment. Additionally, as this technology does not require an array of widediameter lenses and the expensive light sources necessary for advanced photolithography equipment, NIL equipment achieves a simpler, more compact design, allowing for multiple units to be clustered together for increased productivity.
In this paper, we review the progress and status of the FPA-1100NR2 mask replication system and also discuss the methods used on wafer imprint systems to extend the life of a replica mask. Criteria that are crucial to the success of a replication platform include image placement (IP) accuracy and critical dimension uniformity (CDU). Data is presented on both of these subjects. With respect to image placement, an IP accuracy (after removing correctables) of 0.8nm in X, 1.0nm in Y has been demonstrated. Particle adders were studied by cycling the tool for more than 16000 times and measuring particle adders. Additionally, new methods, including on-tool wafer inspection and in-situ mask cleaning are being studied to further extend the replica mask life.
Nanoimprint Lithography (NIL) has been shown to be an effective technique for replication of nano-scale features.
Jet and Flash Imprint Lithography* (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist
deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows
into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV
radiation, and then the mask is removed, leaving a patterned resist on the substrate.
There are many criteria that determine whether a particular technology is ready for high volume semiconductor
manufacturing. Included on the list are overlay, throughput and defectivity.
Imprint lithography, like any lithographic approach requires that defect mechanisms be identified and eliminated in
order to consistently yield a device. NIL has defect mechanisms unique to the technology, and they include liquid phase
defects, solid phase defects and particle related defects. Especially more troublesome are hard particles on either the
mask or wafer surface. Hard particles run the chance of creating a permanent defect in the mask, which cannot be
corrected through a mask cleaning process. If Cost of Ownership (CoO) requirements are to be met, it is critical to
minimize particle formation and extend mask life.
To meet the CoO requirements, mask life must meet or exceed 1000 wafers. If, we make the conservative assumption
that every particles causes damage to the mask pattern, the number of particle adders must be less than 0.001 pieces per
wafer pass in the NIL tool. Therefore, aggressive strategies are needed to reduce particles in the tool.
In this paper, we will report on the techniques required to meet this condition and will describe how the particle
reduction techniques can be extended to our FPA-1200NZ2C system.
Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash* Imprint Lithography (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is cross-linked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate.
Criteria specific to any lithographic process for the semiconductor industry include overlay, throughput and defectivity. The purpose of this paper is to describe the technology advancements made in the reduction of particle adders in an imprint tool.
Hard particles on a wafer or mask create the possibility of creating a permanent defect on the mask that can impact device yield and mask life. By using material methods to reduce particle shedding and by introducing an air curtain system, test stand results demonstrate the potential for extending mask life to better than 1000 wafers.
Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and
Flash* Imprint Lithography (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist
deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows
into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV
radiation, and then the mask is removed, leaving a patterned resist on the substrate.
There are many criteria that determine whether a particular technology is ready for wafer manufacturing. Defectivity
and mask life play a significant role relative to meeting the cost of ownership (CoO) requirements in the production of
semiconductor devices. Hard particles on a wafer or mask create the possibility of inducing a permanent defect on the
mask that can impact device yield and mask life. By using material methods to reduce particle shedding and by
introducing an air curtain system, the lifetime of both the master mask and the replica mask can be extended. In this
work, we report results that demonstrate a path towards achieving mask lifetimes of better than 1000 wafers.
On the mask side, a new replication tool, the FPA-1100 NR2 is introduced. Mask replication is required for
nanoimprint lithography (NIL), and criteria that are crucial to the success of a replication platform include both particle
control, resolution and image placement accuracy. In this paper we discuss the progress made in both feature resolution
and in meeting the image placement specification for replica masks.
Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Jet and Flash* Imprint Lithography (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. Criteria specific to any lithographic process for the semiconductor industry include overlay, throughput and defectivity. The purpose of this paper is to describe the technology advancements made in the reduction of particle adders in an imprint tool and introduce the new mask replication tool that will enable the fabrication of replica masks with added residual image placement errors suitable for memory devices with half pitches smaller than 15nm. Hard particles on a wafer or mask create the possibility of creating a permanent defect on the mask that can impact device yield and mask life. By using material methods to reduce particle shedding and by introducing an air curtain system, test stand results demonstrate the potential for extending mask life to better than 1000 wafers. Additionally, a new replication tool, the FPA-1100 NR2 is introduced. Mask chuck flatness simulation results were also performed and demonstrate that residual image placement errors can be reduced to as little as 1nm.
The Jet and Flash Imprint Lithography (J-FILTM) process uses drop dispensing of UV curable resists to assist high
resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop
solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that
the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105imprints. This suggests that tens of thousands of templates/masks will be required to satisfy the needs of a
manufacturing environment. Electron-beam patterning is too slow to feasibly deliver these volumes, but instead can
provide a high quality "master" mask which can be replicated many times with an imprint lithography tool. This
strategy has the capability to produce the required supply of "working" templates/masks. In this paper, we review the
development of the mask form factor, imprint replication tools and the semiconductor mask replication process.
A PerfectaTM MR5000 mask replication tool has been developed specifically to pattern replica masks from an ebeam
written master. Performance results, including image placement, critical dimension uniformity, and pattern
transfer are covered in detail.
The jet and flash imprint lithography (J-FILTM) process uses drop dispensing of UV curable resists to assist high resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop solutions for memory markets including flash memory and patterned media for hard disk drives. It is anticipated that the lifetime of a single template (for patterned media) or mask (for semiconductors) will be on the order of 104 to 105 imprints. This suggests that tens of thousands of templates/masks will be required to satisfy the needs of a manufacturing environment. Electron-beam patterning is too slow to feasibly deliver these volumes, but instead can provide a high quality master mask which can be replicated many times with an imprint lithography tool. This strategy has the capability to produce the required supply of "working" templates/masks. In this paper, we review the development of the mask form factor, imprint replication tools, and the semiconductor mask replication process. A PerfectaTM MR5000 mask replication tool has been developed specifically to pattern replica masks from an e-beam written master. Performance results, including image placement, critical dimension uniformity, and pattern transfer, are covered in detail.
The Jet and Flash Imprint Lithography (J-FILTM) process uses drop dispensing of UV curable resists to assist high
resolution patterning for subsequent dry etch pattern transfer. The technology is actively being used to develop
solutions for memory markets including Flash memory and patterned media for hard disk drives. It is anticipated that
the lifetime of a single template (for patterned media) or mask (for semiconductor) will be on the order of 104 - 105imprints. This suggests that tens of thousands of templates/masks will be required to satisfy the needs of a
manufacturing environment. Electron-beam patterning is too slow to feasibly deliver these volumes, but instead can
provide a high quality "master" mask which can be replicated many times with an imprint lithography tool. This
strategy has the capability to produce the required supply of "working" templates/masks. In this paper, we review the
development of the mask form factor, imprint replication tools and processes specifically for semiconductor
applications.
The requirements needed for semiconductors dictate the need for a well defined form factor for both master and
replica masks which is also compatible with the existing mask infrastructure established for the 6025 semi standard, 6"
x 6" x 0.25" photomasks. Complying with this standard provides the necessary tooling needed for mask fabrication
processes, cleaning, metrology, and inspection. The replica form factor has additional features specific to imprinting
such as a pre-patterned mesa. A PerfectaTM MR5000 mask replication tool has been developed specifically to pattern
replica masks from an e-beam written master. The system specifications include a throughput of four replicas per hour
with an added image placement component of 5nm, 3sigma and a critical dimension uniformity error of less than 1nm,
3sigma. A new process has been developed to fabricate replicas with high contrast alignment marks so that designs for
imprint can fit within current device layouts and maximize the usable printed area on the wafer. Initial performance
results of this marks are comparable to the baseline fused silica align marks.
The Step and Flash Imprint Lithography (S-FILTM) process uses field-to-field drop dispensing of UV curable
liquids for step and repeat patterning for applications where high-resolution mix-and-match overlay is desired.
Several applications, including patterned media, photonic crystals and wire grid polarizers, are better served by a
patterning process that prints the full wafer since alignment requirements are not so stringent. In this paper, a
methodology for creating high resolution thin templates for full wafer (or disk) imprinting is described. The methods
have been applied toward the imprinting of both photonic crystal and patterned media devices using a large area printing tool developed around the S-FIL process.
The Step and Flash Imprint Lithography (S-FIL™) process is a nano-imprint lithography technique based on
UV curable low viscosity liquids. S-FIL uses drop dispensing of UV curable liquids to pattern entire wafers with a
single imprint. This approach allows for micro and nano-fabrication of devices with widely varying pattern densities and
complicated structures over wafers with high nanotopography. Patterning of arbitrarily shaped sub-100 nm structures
with nanotopography which is greater than 10&mgr;m is not obtainable using DUV stepper technology. Photonic crystal
structures, wire grid polarizers and micro lenses are examples of optical components that can be formed using S-FIL
technology imprinting on whole substrates.
The authors have devised a beginning to end lithography process which includes: wafer preparation processes
for imprint, a high throughput whole wafer step and repeat imprint process and dry etching processes for resists and hard
mask patterning. The process is capable of patterning sub-100 nm hard masks on substrates where the nanotopography
is in excess of 10&mgr;m across the substrate. The imprint process flow uses the Step and Flash Imprint Lithography Reverse
(S-FIL/R) tone process which has been demonstrated to be robust at holding critical dimensions for a wide window of
etch conditions, wafer topography and defects. The authors describe a photonic crystal patterning process from
beginning to end with particular attention to etch selectivity, analysis of cross wafer critical dimensions and a survey of
defect requirements for successful high yield imprint patterning.
Due to their small dimensions when used for visible light, the patterning of photonic crystals has only been possible
with costly electron beam lithography and low throughput R&D and pilot production grade imprint lithography. This
paper will focus on results from a high throughput imprint tool capable of processing over 20 wafers per hour on 50-
100mm sapphire, GaAs, SiC, Ge and metal substrates. An overview of the process used as well as the results of
patterning photonic crystal patterns on sapphire wafers and etching them into a SiO2 hard mask will be presented.
Finally an analysis of the cost of ownership which currently stands at ~ $20/wf (<$0.01/mm2 for 50mm wafers) will be
presented and opportunities for improvement discussed.
Electrochemical techniques are exploited to fabricate conductive polymer/high Tc superconductor bilayer structures. SCanning electron microscopy and electrochemical techniques are utilized to characterize the electrodeposition of polypyrrole layers grown onto YBa2Cu3O7-(delta ) films. In such hybrid polymer/superconductor systems, it is found that when the polymer is oxidized to its conductive state, the transition temperatures (Tc) and critical currents (Jc) of the underlying superconductor film are suppressed. Reversible modulation of the values of the transition temperatures of up to 50K are noted for these structures. Upon reduction of the conductive polymer layer back to its non-conductive form, both Tc and Jc are found to return to values close to those acquired for the underivatized YBa2Cu3O7-(delta ) film. Moreover, measurements as a function of temperature of the polymer/superconductor interface resistance show dramatic decrease in this value at Tc. ALso, estimates of superconducting coherence lengths within the organic conductor samples suggest superconducting properties over macroscopically large distances within the organic materials can be expected. Collectively these results are consistent with the first observation of a conductive polymer proximity effect.
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