|
Additions to the OPC model include accounting for anamorphic effects in the optics, mask electromagnetics, and mask manufacturing. The correction algorithm is updated to include awareness of anamorphic mask geometry for mask rule checking (MRC). OPC verification through process window conditions is enhanced to test different wafer scale mask error ranges in the horizontal and vertical directions. This work will show that existing models and methods can be updated to support anamorphic optics without major changes. Also, the larger mask size in the Y direction can result in better model accuracy, easier OPC convergence, and designs which are more tolerant to mask errors. |
ACCESS THE FULL ARTICLE
No SPIE Account? Create one
Photomasks
Semiconducting wafers
Optical proximity correction
Finite-difference time-domain method
Systems modeling
Wafer-level optics
Extreme ultraviolet lithography
