Dr. Kostas Adam Profile

Dr. Kostas Adam

VP of Engineering at Synopsys

SPIE Involvement:

Author

Publications (51)

Proceedings Article | 20 March 2020 Presentation + Paper

Presentation + Paper

Real-time full-wafer design-based inter-layer virtual metrology

Lianghong Yin, John Sturtevant, Alberto Lopez Gomez, Shumay Shang, Young Chang Kim, Kostas Adam, Marko Chew, Abhinandan Nath, Boris Habets, Manuela Gutsch, Philip Groeger

Proceedings Volume 11325, 1132507 (2020) https://doi.org/10.1117/12.2551082

KEYWORDS: Semiconducting wafers, Data modeling, Overlay metrology, Metals, Metrology, Critical dimension metrology, Databases, Inspection, Computer simulations, Scanners

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Proceedings Article | 4 April 2019 Paper

Paper

Using machine learning in the physical modeling of lithographic processes

Kostas Adam, Shashidhara Ganjugunte, Clement Moyroud, Kostya Shchehlik, Michael Lam, Andrew Burbine, Germain Fenger, Yuri Granik

Proceedings Volume 10962, 109620F (2019) https://doi.org/10.1117/12.2519848

KEYWORDS: Neural networks, Machine learning, Systems modeling, Optical proximity correction, Data modeling, Process modeling, Calibration, Lithography, Cadmium, Coastal modeling

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Proceedings Article | 20 March 2019 Presentation + Paper

Presentation + Paper

Process window-based feature and die failure rate prediction

John Sturtevant, Lianghong Yin, Young Chang Kim, Shumay Shang, Andrew Burbine, Chris Clifford, Kostas Adam

Proceedings Volume 10962, 109620B (2019) https://doi.org/10.1117/12.2516101

KEYWORDS: Failure analysis, Critical dimension metrology, Lithography, Logic, Manufacturing, Photomasks, Error analysis, Stochastic processes, Visualization, Optical proximity correction

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Proceedings Article | 18 March 2019 Presentation

Presentation

Physical and compact modeling of resist deformation (Conference Presentation)

Gurdaman Khaira, Yuri Granik, Kostas Adam, Germain Fenger

Proceedings Volume 10961, 109610E (2019) https://doi.org/10.1117/12.2515128

KEYWORDS: Photoresist developing, Lithography, Finite element methods, Process modeling, Photoresist processing, Computer simulations, Chemically amplified resists, Optical lithography, Photoresist materials, 3D modeling

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Proceedings Article | 16 October 2017 Paper

Paper

Optical proximity correction for anamorphic extreme ultraviolet lithography

Chris Clifford, Michael Lam, Ananthan Raghunathan, Fan Jiang, Germain Fenger, Kostas Adam

Proceedings Volume 10450, 104500V (2017) https://doi.org/10.1117/12.2280548

KEYWORDS: Photomasks, Semiconducting wafers, Optical proximity correction, Finite-difference time-domain method, Wafer-level optics, Systems modeling, Extreme ultraviolet lithography, Projection systems, Scanners, Electromagnetism

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Proceedings Article | 16 October 2017 Paper

Paper

Edge placement errors in EUV from aberration variation

Ananthan Raghunathan, Germain Fenger, Michael Lam, Chris Clifford, Kostas Adam, John Sturtevant

Proceedings Volume 10451, 104510W (2017) https://doi.org/10.1117/12.2280609

KEYWORDS: Optical proximity correction, Wavefronts, Extreme ultraviolet, Scanners, Photomasks, Error analysis, Extreme ultraviolet lithography, Manufacturing, 3D modeling, Tolerancing

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With several foundries/IDMs committed to using EUV to manufacture devices at the 7 nm and 5 nm nodes, the success of EUVL will depend critically on the ability of manufacturers to meet extremely tight edge placement error (EPE) budgets. EPE is affected by many factors and it becomes important to identify and address all systematic sources of edge placement error. One major source of this error, which hasn’t been given a lot of attention, continues to be the magnitude and variation of aberrations across the exposure field and between different scanners. EUV scanners are known to have significantly higher level of aberrations than DUV scanners due to the substantial drop in wavelength requiring tighter specifications on lens roughness, as well as a move to reflective optics producing double pass impact of surface roughness.

While the EPE from variation in aberrations across the exposure field is correctable in OPC software, there are no known ways to address tool-to-tool aberration variation. Given that foundries are expected to have multiple EUV tools for high volume manufacturing, the degree of tool-matching between different machines is expected to play a critical role to the success of EUV. This work seeks to further the study by quantifying the simulated edge placement error on realistic 7 nm / 5 nm node designs resulting from a fleet consisting of multiple EUV tools, under the assumption of single OPC model / mask for multiple tools and whether such assumptions are valid. Given the importance of tool-to-tool aberration matching in EUVL, this study investigates the amount of variation in tool-to-tool aberration that can be tolerated before foundries must consider tool dedicated OPC mask sets. This study statistically analyzes different metrics such as EPEs, image shifts and worst case excursions to understand which single tool in the fleet should be best used in model calibration to generate the OPC mask shapes. In addition, an effort to rank relative quality of the verification solutions is investigated, to be used to tool allocation.

Proceedings Article | 28 September 2017 Paper

Paper

Aerial image metrology for OPC modeling and mask qualification

Ao Chen, Yee Mei Foong, Thomas Thaler, Ute Buttgereit, Angeline Chung, Andrew Burbine, John Sturtevant, Chris Clifford, Kostas Adam, Peter De Bisschop

Proceedings Volume 10446, 104460V (2017) https://doi.org/10.1117/12.2281886

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SPIE Journal Paper | 19 August 2017

Optical proximity correction for anamorphic extreme ultraviolet lithography

Chris Clifford, Michael Lam, Ananthan Raghunathan, Fan Jiang, Germain Fenger, Kostas Adam

JM3, Vol. 16, Issue 04, 041004, (August 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.4.041004

KEYWORDS: Photomasks, Semiconducting wafers, Optical proximity correction, Wafer-level optics, Finite-difference time-domain method, Extreme ultraviolet, Systems modeling, Scanners, Extreme ultraviolet lithography, Projection systems

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SPIE Journal Paper | 25 July 2017

Enabling full-field physics-based optical proximity correction via dynamic model generation

Michael Lam, Chris Clifford, Ananthan Raghunathan, Germain Fenger, Kostas Adam

JM3, Vol. 16, Issue 03, 033502, (July 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.3.033502

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Proceedings Article | 24 March 2017 Presentation + Paper

Presentation + Paper

Enabling full field physics based OPC via dynamic model generation

Michael Lam, Chris Clifford, Ananthan Raghunathan, Germain Fenger, Kostas Adam

Proceedings Volume 10143, 1014316 (2017) https://doi.org/10.1117/12.2261222

KEYWORDS: Optical proximity correction, Physics, Extreme ultraviolet, Extreme ultraviolet lithography, Photomasks, Optical simulations, Apodization, Optical aberrations, Wavefront aberrations, Photovoltaics, Computer simulations, Reticles, Scanners, Lithography

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Proceedings Article | 24 March 2017 Presentation + Paper

Presentation + Paper

Effective use of aerial image metrology for calibration of OPC models

Ao Chen, Yee Mei Foong, Thomas Thaler, Ute Buttgereit, Angeline Chung, Andrew Burbine, John Sturtevant, Chris Clifford, Kostas Adam, Peter DeBisschop

Proceedings Volume 10147, 101470Y (2017) https://doi.org/10.1117/12.2258632

KEYWORDS: Photomasks, Optical proximity correction, Data modeling, Metrology, 3D modeling, Semiconducting wafers, Photoresist materials, Calibration, Wafer-level optics, Image processing, Scanners

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Proceedings Article | 24 March 2016 Paper

Paper

Modeling metrology for calibration of OPC models

Chris Mack, Ananthan Raghunathan, John Sturtevant, Yunfei Deng, Christian Zuniga, Kostas Adam

Proceedings Volume 9778, 97781Q (2016) https://doi.org/10.1117/12.2218534

KEYWORDS: Metrology, Optical proximity correction, Calibration, Data modeling, Photomasks, Lithography, 3D modeling, Electrons, Scanning electron microscopy, Semiconducting wafers, Monte Carlo methods

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Proceedings Article | 15 March 2016 Paper

Paper

Source mask optimization using 3D mask and compact resist models

Omar El-Sewefy, Ao Chen, Neal Lafferty, Jason Meiring, Angeline Chung, Yee Mei Foong, Kostas Adam, John Sturtevant

Proceedings Volume 9780, 978019 (2016) https://doi.org/10.1117/12.2220011

KEYWORDS: 3D modeling, Source mask optimization, Photomasks, Performance modeling, Optical proximity correction, Lithography, Optimization (mathematics), Algorithm development, Computational lithography, Superposition, Nanoimprint lithography, Image processing, Data modeling

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Source Mask Optimization (SMO) has played an important role in technology setup and ground rule definition since the 2x nm technology node. While improvements in SMO algorithms have produced higher quality and more consistent results, the accuracy of the overall solution is critically linked to how faithfully the entire patterning system is modeled, from mask down to substrate. Fortunately, modeling technology has continued to advance to provide greater accuracy in modeling 3D mask effects, 3D resist behavior, and resist phenomena. Specifically, the Domain Decomposition Method (DDM) approximates the 3D mask response as a superposition of edge-responses.¹ The DDM can be applied to a sectorized illumination source based on Hybrid-Hopkins Abbe approximation,² which provides an accurate and fast solution for the modeling of 3D mask effects and has been widely used in OPC modeling. The implementation of DDM in the SMO flow, however, is more challenging because the shape and intensity of the source, unlike the case in OPC modeling, is evolving along the optimization path. As a result, it gets more complicated. It is accepted that inadequate pupil sectorization results in reduced accuracy in any application, however in SMO the required uniformity and density of pupil sampling is higher than typical OPC and modeling cases. In this paper, we describe a novel method to implement DDM in the SMO flow. The source sectorization is defined by following the universal pixel sizes used in SMO. Fast algorithms are developed to enable computation of edge signals from each fine pixel of the source. In this case, each pixel has accurate information to describe its contribution to imaging and the overall objective function. A more continuous angular spectrum from 3D mask scattering is thus captured, leading to accurate modeling of 3D mask effects throughout source optimization. This method is applied on a 2x nm middle-of-line layer test case. The impact of the 3D mask model accuracy on the source profile and corresponding lithographic performance is studied in detail. Furthermore, the impact of using a compact resist model in SMO is also investigated by using the same test case.

SPIE Journal Paper | 16 February 2016

Accurate, full-chip, three-dimensional electromagnetic field model for non-Manhattan mask corners

Michael Lam, Chris Clifford, Mike Oliver, David Fryer, Edita Tejnil, Kostas Adam

JM3, Vol. 15, Issue 02, 021204, (February 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.2.021204

KEYWORDS: 3D modeling, Photomasks, Near field, Electromagnetism, Lithography, Semiconducting wafers, Scattering, Lithographic illumination, Diffraction, Critical dimension metrology

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Proceedings Article | 18 March 2015 Paper

Paper

Accurate, full chip 3D electromagnetic field model for non-Manhattan mask corners

Michael Lam, Chris Clifford, Michael Oliver, David Fryer, Edita Tejnil, Kostas Adam

Proceedings Volume 9426, 94260P (2015) https://doi.org/10.1117/12.2085671

KEYWORDS: 3D modeling, Photomasks, Near field, Critical dimension metrology, Semiconducting wafers, Lithography, Image quality, Data transmission, Electromagnetism, Diffraction

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Proceedings Article | 18 March 2015 Paper

Paper

Practical DTCO through design/patterning exploration

Neal Lafferty, Jason Meiring, Mohamed Bahnas, Joseph O'Neill, Toshikazu Endo, Dan Schumacher, James Culp, Glenn Wawrzynski, Gurpreet Lamba, Kostas Adam, John Sturtevant, Chris McGinty

Proceedings Volume 9427, 942710 (2015) https://doi.org/10.1117/12.2086355

KEYWORDS: Optical proximity correction, Optical lithography, Visualization, Photovoltaics, Legal, Resolution enhancement technologies, Manufacturing, Aerospace engineering, Metals, Databases

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Proceedings Article | 29 October 2014 Paper

Paper

Full-flow RET creation, comparison, and selection

Neal Lafferty, Yuan He, Mikhail Silakov, Toshi Endo, Kostas Adam

Proceedings Volume 9235, 92351Z (2014) https://doi.org/10.1117/12.2069473

KEYWORDS: Resolution enhancement technologies, Source mask optimization, Photomasks, Optical lithography, Lithography, Optical proximity correction, Photovoltaics, Nanoimprint lithography, Visualization, Performance modeling

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Proceedings Article | 17 October 2014 Paper

Paper

14-nm photomask simulation sensitivity

John Sturtevant, Peter Buck, Steffen Schulze, David Fryer, Edita Tejnil, Kostas Adam, Michael Lam, Chris Clifford, Mike Oliver, Ana Armeanu, Franklin Kalk, Kent Nakagawa, Guoxiang Ning, Paul Ackmann, Fritz Gans, Christian Buergel

Proceedings Volume 9231, 92310I (2014) https://doi.org/10.1117/12.2066483

KEYWORDS: Photomasks, 3D modeling, Semiconducting wafers, Optical proximity correction, Data modeling, Calibration, Manufacturing, Photoresist materials, Metrology, Refractive index

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Proceedings Article | 31 March 2014 Paper

Paper

Rapid, accurate improvement in 3D mask representation via input geometry optimization and crosstalk

David Fryer, Michael Lam, Kostas Adam, Chris Clifford, Mike Oliver, Christian Zuniga, John Sturtevant, ChangAn Wang, Scott Mansfield

Proceedings Volume 9052, 905216 (2014) https://doi.org/10.1117/12.2046489

KEYWORDS: Photomasks, 3D modeling, Calibration, Source mask optimization, Data modeling, Semiconducting wafers, Performance modeling, Tolerancing, Metrology, Manufacturing

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Proceedings Article | 12 April 2013 Paper

Paper

Accurate 3DEMF mask model for full-chip simulation

Michael Lam, Kostas Adam, David Fryer, Christian Zuniga, Haiqing Wei, Michael Oliver, Chris Clifford

Proceedings Volume 8683, 86831D (2013) https://doi.org/10.1117/12.2013167

KEYWORDS: Photomasks, Polarization, Scattering, Near field, Light scattering, Optical proximity correction, Semiconducting wafers, Systems modeling, Error analysis, Solids

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Proceedings Article | 23 March 2012 Paper

Paper

3D mask modeling for EUV lithography

Julien Mailfert, Christian Zuniga, Vicky Philipsen, Konstantinos Adam, Michael Lam, James Word, Eric Hendrickx, Geert Vandenberghe, Bruce Smith

Proceedings Volume 8322, 832224 (2012) https://doi.org/10.1117/12.918267

KEYWORDS: Photomasks, Extreme ultraviolet, 3D modeling, Reflectivity, Extreme ultraviolet lithography, Calibration, Semiconducting wafers, Scanners, Mirrors, Visualization

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Proceedings Article | 13 March 2012 Paper

Paper

Full-chip correction of implant layer accounting for underlying topography

Minchul Oh, Hyungjoo Youn, Noyoung Chung, Jaeyeol Maeng, Sukjoo Lee, Jahum Ku, Aasutosh Dave, John Sturtevant, Uwe Hollerbach, Thuy Do, Yuri Granik, Kostas Adam, Juhwan Kim, Cynthia Zhu, S. W. Jung

Proceedings Volume 8326, 83262R (2012) https://doi.org/10.1117/12.917984

KEYWORDS: Photomasks, Optical proximity correction, Oxides, Critical dimension metrology, Semiconducting wafers, Reflectivity, Calibration, Data modeling, Model-based design, Photoresist materials

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Proceedings Article | 14 October 2011 Paper

Paper

Total source mask optimization: high-capacity, resist modeling, and production-ready mask solution

Moutaz Fakhry, Yuri Granik, Kostas Adam, Kafai Lai

Proceedings Volume 8166, 81663M (2011) https://doi.org/10.1117/12.898860

KEYWORDS: Source mask optimization, Photomasks, Lithography, Optimization (mathematics), Photoresist processing, Manufacturing, Process modeling, Optical proximity correction, 193nm lithography, Lithographic illumination

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Proceedings Article | 14 October 2011 Paper

Paper

OPC modeling and correction solutions for EUV lithography

James Word, Christian Zuniga, Michael Lam, Mohamed Habib, Kostas Adam, Michael Oliver

Proceedings Volume 8166, 81660Q (2011) https://doi.org/10.1117/12.899591

KEYWORDS: Optical proximity correction, Photomasks, Reticles, Extreme ultraviolet lithography, Model-based design, Reflectivity, 3D modeling, Extreme ultraviolet, Optical lithography, Semiconducting wafers

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Proceedings Article | 23 March 2011 Paper

Paper

Applicability of global source mask optimization to 22/20nm node and beyond

Kehan Tian, Moutaz Fakhry, Aasutosh Dave, Alexander Tritchkov, Jaione Tirapu-Azpiroz, Alan Rosenbluth, David Melville, Masaharu Sakamoto, Tadanobu Inoue, Scott Mansfield, Alexander Wei, Young Kim, Bruce Durgan, Kostas Adam, Gabriel Berger, Gandharv Bhatara, Jason Meiring, Henning Haffner, Byung-Sung Kim

Proceedings Volume 7973, 79730C (2011) https://doi.org/10.1117/12.879703

KEYWORDS: Source mask optimization, Photomasks, Resolution enhancement technologies, Optical proximity correction, Tolerancing, Optical lithography, SRAF, Image processing, Lithography, Semiconducting wafers

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Proceedings Article | 16 March 2010 Paper

Paper

Demonstrating the benefits of source-mask optimization and enabling technologies through experiment and simulations

David Melville, Alan Rosenbluth, Kehan Tian, Kafai Lai, Saeed Bagheri, Jaione Tirapu-Azpiroz, Jason Meiring, Scott Halle, Greg McIntyre, Tom Faure, Daniel Corliss, Azalia Krasnoperova, Lei Zhuang, Phil Strenski, Andreas Waechter, Laszlo Ladanyi, Francisco Barahona, Daniele Scarpazza, Jon Lee, Tadanobu Inoue, Masaharu Sakamoto, Hidemasa Muta, Alfred Wagner, Geoffrey Burr, Young Kim, Emily Gallagher, Mike Hibbs, Alexander Tritchkov, Yuri Granik, Moutaz Fakhry, Kostas Adam, Gabriel Berger, Michael Lam, Aasutosh Dave, Nick Cobb

Proceedings Volume 7640, 764006 (2010) https://doi.org/10.1117/12.846716

KEYWORDS: Source mask optimization, Photomasks, Metals, Lithography, Optical proximity correction, Line edge roughness, Resolution enhancement technologies, Diffractive optical elements, Semiconducting wafers, Scanning electron microscopy

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Proceedings Article | 16 March 2009 Paper

Paper

Modeling laser bandwidth for OPC applications

Christian Zuniga, Kostas Adam, Michael Lam, Ivan Lalovic, Peter De Bisschop

Proceedings Volume 7274, 72741O (2009) https://doi.org/10.1117/12.813869

KEYWORDS: Data modeling, Calibration, Optical proximity correction, Chromatic aberrations, Cadmium, Critical dimension metrology, Laser applications, Systems modeling, Image processing, Laser scanners

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Proceedings Article | 20 March 2008 Paper

Paper

Hybrid Hopkins-Abbe method for modeling oblique angle mask effects in OPC

Konstantinos Adam, Michael Lam

Proceedings Volume 6924, 69241E (2008) https://doi.org/10.1117/12.776731

KEYWORDS: System on a chip, Panoramic photography, Diffraction, Optical proximity correction, 3D modeling, Scattering, Computer simulations, Photomasks, Electromagnetic scattering, Cadmium sulfide

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Proceedings Article | 27 March 2007 Paper

Paper

Understanding the impact of rigorous mask effects in the presence of empirical process models used in optical proximity correction (OPC)

Michael Lam, Konstantinos Adam

Proceedings Volume 6520, 65203M (2007) https://doi.org/10.1117/12.712362

KEYWORDS: Photomasks, Process modeling, Data modeling, Optical proximity correction, Cadmium sulfide, Calibration, Wafer-level optics, Critical dimension metrology, Semiconducting wafers, Optical calibration

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Some practical aspects of integrating a mask modeling solution into the Optical Proximity Correction (OPC) framework are discussed. Specifically, investigations were performed to understand to what degree empirical process models used in OPC can compensate for mask effects when a Kirchhoff mask model is used. It is shown that both Constant Threshold Resist (CTR) models as well as more complex variable threshold process models can both compensate for mask effects at a single plane of focus. However, when looking through process window, neither process model can predict the focal behavior of Electro-Magnetic Field (EMF) simulators. The impact of mask effects will therefore need to be modeled in OPC, since process models cannot fully compensate for their effects. Heuristic approaches to modeling mask effects, like a constant biasing of feature edges, are then investigated and compared to more complex mask modeling solutions like Domain Decomposition Methods (DDM). It is shown that these heuristic approaches can be effective at single planes of focus to partially mitigate mask effects, however, do not provide complete solutions to predict and compensate for mask effects. DDM stands in stark contrast to heuristic methods, correctly predicting the through focus behavior of EMF simulations for the tested pitches and CDs. The impact of optical diameter (periodic boundary conditions) is also investigated to understand how the introduction of mask periodicity effects from optical diameter degrades the benefits derived from mask modeling. It is shown that as much as a 33% reduction in CD predictability is observed from an optical model with a 1um optical diameter compared to a 2.56um optical diameter. Finally, both a Kirchhoff mask model and a DDM mask model are compared to see which mask model more accurately explains experimental CD measurement data from a 65nm process. The DDM model generally reduces the edge placement error (EPE) on the calibrated focal data by 0.3-1.0nm.

Proceedings Article | 21 June 2006 Paper

Paper

Consequences of plasmonic effects in photomasks

F. Schellenberg, K. Adam, J. Matteo, L. Hesselink

Proceedings Volume 6281, 62810B (2006) https://doi.org/10.1117/12.692732

KEYWORDS: Photomasks, Polarization, SRAF, Resolution enhancement technologies, Plasmonics, Chromium, Plasmons, Computer simulations, Lithography, Surface plasmons

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Proceedings Article | 15 March 2006 Paper

Paper

EMF simulation with DDM to enable EAPSM masks in 45-nm manufacturing

Patrick Martin, C. Progler, Michael Cangemi, Kostas Adam, George Bailey, Pat LaCour

Proceedings Volume 6154, 61541G (2006) https://doi.org/10.1117/12.659487

KEYWORDS: SRAF, Polarization, Photomasks, Data modeling, Optical proximity correction, Refractive index, Manufacturing, System on a chip, Critical dimension metrology, Resolution enhancement technologies

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Proceedings Article | 9 November 2005 Paper

Paper

Analytical approximations of the source intensity distributions

Yuri Granik, Kostas Adam

Proceedings Volume 5992, 599255 (2005) https://doi.org/10.1117/12.632185

KEYWORDS: Optical proximity correction, Scanners, Convolution, Diffractive optical elements, Lithographic illumination, Model-based design, Composites, Light, Visualization, Error analysis

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Proceedings Article | 8 November 2005 Paper

Paper

Reverse engineering source polarization error

George Bailey, Kostas Adam, Travis Brist, Olivier Toublan, Andrew Estroff

Proceedings Volume 5992, 599234 (2005) https://doi.org/10.1117/12.632420

KEYWORDS: Polarization, Data modeling, Reverse modeling, Error analysis, Immersion lithography, Reverse engineering, Critical dimension metrology, Semiconducting wafers, Calibration, Lithography

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SPIE Journal Paper | 1 July 2005

Polarization effects in immersion lithography

Konstantinos Adam, Wilhelm Maurer

JM3, Vol. 4, Issue 03, 031106, (July 2005) https://doi.org/10.1117/12.10.1117/1.2038687

KEYWORDS: Polarization, Immersion lithography, Optical proximity correction, Diffraction, Photomasks, Water, Lithographic illumination, Model-based design, Nanoimprint lithography, Lithography

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Proceedings Article | 12 May 2005 Paper

Paper

Modeling of electromagnetic effects from mask topography at full-chip scale

Konstantinos Adam

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.600139

KEYWORDS: Photomasks, 3D modeling, Electromagnetism, Optical proximity correction, Polarization, Lithography, Diffraction, Electromagnetic scattering, Imaging systems, System on a chip

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Proceedings Article | 12 May 2005 Paper

Paper

Polarization influences through the optical path

George Bailey, Kostas Adam

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.600660

KEYWORDS: Polarization, Photomasks, Resolution enhancement technologies, 3D modeling, Lithography, Diffraction, Nanoimprint lithography, Optical proximity correction, Binary data, Systems modeling

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Proceedings Article | 12 May 2005 Paper

Paper

Physically based compact models for fast lithography simulation

Neal Lafferty, Kostas Adam, Yuri Granik, Andres Torres, Wilhelm Maurer

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599889

KEYWORDS: Process modeling, Lithography, Data modeling, Calibration, Resolution enhancement technologies, Error analysis, Semiconducting wafers, Photoresist processing, Optical proximity correction, Wafer-level optics

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Proceedings Article | 28 May 2004 Paper

Paper

Polarization effects in immersion lithography

Konstantinos Adam, Wilhelm Maurer

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.534322

KEYWORDS: Polarization, Optical proximity correction, Immersion lithography, Water, Diffraction, Photomasks, Model-based design, Nanoimprint lithography, Scanners, Lithography

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Proceedings Article | 26 June 2003 Paper

Paper

Improved modeling performance with an adapted vectorial formulation of the Hopkins imaging equation

Konstantinos Adam, Yuri Granik, Andres Torres, Nicolas Cobb

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485357

KEYWORDS: Polarization, Data modeling, Diffraction, Optical proximity correction, Monochromatic aberrations, Systems modeling, Photomasks, Visualization, Thin films, Image acquisition

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Proceedings Article | 26 June 2003 Paper

Paper

Domain decomposition methods for simulation of printing and inspection of phase defects

Michael Lam, Konstantinos Adam, Andrew Neureuther

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485485

KEYWORDS: Inspection, Polarization, Projection systems, Photomasks, Etching, Diffraction, Printing, Computer simulations, Spatial frequencies, Cadmium sulfide

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SPIE Journal Paper | 1 October 2002

Domain decomposition methods for the rapid electromagnetic simulation of photomask scattering

Konstantinos Adam, Andrew Neureuther

JM3, Vol. 1, Issue 03, (October 2002) https://doi.org/10.1117/12.10.1117/1.1506178

KEYWORDS: Photomasks, Diffraction, 3D modeling, Scattering, Electromagnetic simulation, Near field, Polarization, Computer simulations, Optical proximity correction, Electromagnetism

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Proceedings Article | 30 July 2002 Paper

Paper

Algorithmic implementations of domain decomposition methods for the diffraction simulation of advanced photomasks

Konstantinos Adam, Andrew Neureuther

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474483

KEYWORDS: Photomasks, Diffraction, 3D modeling, Computer simulations, Near field, Polarization, Promethium, Optical proximity correction, Spatial frequencies, Scattering

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Proceedings Article | 11 March 2002 Paper

Paper

Methodology for accurate and rapid simulation of large arbitrary 2D layouts of advanced photomasks

Konstantinos Adam, Andrew Neureuther

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458269

KEYWORDS: Diffraction, Polarization, Photomasks, Scattering, Near field, Chromium, Data transmission, 3D modeling, Electromagnetism, Image acquisition

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Proceedings Article | 14 September 2001 Paper

Paper

Simplified models for edge transitions in rigorous mask modeling

Konstantinos Adam, Andrew Neureuther

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435733

KEYWORDS: Photomasks, Diffraction, 3D modeling, Data transmission, Near field, Glasses, 3D image processing, Lithography, Phase shifts, Optical proximity correction

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Proceedings Article | 14 September 2001 Paper

Paper

LAVA web-based remote simulation: enhancements for education and technology innovation

Sang Il Lee, Ka Chun Ng, Takashi Orimoto, Jason Pittenger, Toshi Horie, Konstantinos Adam, Mosong Cheng, Ebo Croffie, Yunfei Deng, Frank Gennari, Thomas Pistor, Garth Robins, Mike Williamson, Bo Wu, Lei Yuan, Andrew Neureuther

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435691

KEYWORDS: Printing, Java, Photomasks, Diffusion, Near field, Computer simulations, Optical simulations, Lithography, Human-machine interfaces, Etching

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Proceedings Article | 5 September 2001 Paper

Paper

Simulation of image quality issues at low k1 for 100-nm lithography

Andrew Neureuther, Konstantinos Adam, Shoji Hotta, Thomas Pistor, Garth Robins, Yunfei Deng

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438395

KEYWORDS: Photomasks, Monochromatic aberrations, Phase shifts, Lithography, Printing, Quartz, Image quality, Extreme ultraviolet, Spherical lenses, Near field

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Proceedings Article | 22 January 2001 Paper

Paper

Modeling defect-feature interactions in the presence of aberrations

Andrew Neureuther, Shoji Hotta, Konstantinos Adam

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410717

KEYWORDS: Monochromatic aberrations, Spherical lenses, Photomasks, Halftones, Wafer inspection, Phase shifts, Interferometry, Calibration, Inspection, Inspection equipment

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Proceedings Article | 22 January 2001 Paper

Paper

Effects of shifter edge topography on through focus performance

Shoji Hotta, Thomas Pistor, Konstantinos Adam, Andrew Neureuther

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410765

KEYWORDS: Photomask technology

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Proceedings Article | 5 July 2000 Paper

Paper

Analysis of OPC features in binary masks at 193 nm

Konstantinos Adam, Andrew Neureuther

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389064

KEYWORDS: Optical proximity correction, Electromagnetic simulation, Photomasks, Binary data, Polarization, Ear, Cerium, Near field, Chromium, Electromagnetism

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Proceedings Article | 18 December 1998 Paper

Paper

Effect of reticle CD uniformity on wafer CD uniformity in the presence of scattering-bar optical proximity correction

Konstantinos Adam, Robert Socha, Mircea Dusa, Andrew Neureuther

Proceedings Volume 3546, (1998) https://doi.org/10.1117/12.332862

KEYWORDS: Optical proximity correction, Photomasks, Semiconducting wafers, Reticles, Scattering, Error analysis, Scanning electron microscopy, Metrology, Dysprosium, Semiconductors

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Proceedings Article | 7 July 1997 Paper

Paper

Simulating photomask edge roughness and corner rounding

Konstantinos Adam, Robert Socha, Thomas Pistor, Andrew Neureuther

Proceedings Volume 3050, (1997) https://doi.org/10.1117/12.275911

KEYWORDS: Photomasks, Edge roughness, Lithography, Semiconducting wafers, Printing, Deep ultraviolet, Electromagnetism, Computer simulations, Glasses, Imaging systems

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Showing 5 of 51 publications

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