Poster + Presentation
22 August 2020 Investigation on organic thin film transistors (TFT) by Kelvin probe force microscopy (KPFM)
Mélanie Brouillard, Ute Zschieschang, Nicolas Bogdan Bercu, Olivier Simonetti, Hagen Klauk, Louis Giraudet
Author Affiliations +
Conference Poster
Abstract
Using Kelvin Probe Force Microscopy (KPFM), we performed surface-potential measurements on operating organic thin-film transistors (TFTs). Several parameters inaccessible through current-voltage measurements were determined, namely the source and drain resistances separately, the threshold voltage and the electric field along the channel. We show that the source resistance is always higher than the drain resistance, and non-linear intrinsic behavior is demonstrated in some cases. The threshold voltage extracted by KPFM is different from that extracted from current-voltage measurements. By analyzing the tip response using calibration samples, the electric field at the source/channel interface can be estimated within a small error margin.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mélanie Brouillard, Ute Zschieschang, Nicolas Bogdan Bercu, Olivier Simonetti, Hagen Klauk, and Louis Giraudet "Investigation on organic thin film transistors (TFT) by Kelvin probe force microscopy (KPFM)", Proc. SPIE 11476, Organic and Hybrid Field-Effect Transistors XIX, 1147614 (22 August 2020); https://doi.org/10.1117/12.2567406
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Microscopy

Thin films

Transistors

Error analysis

Resistance

Interfaces

Statistical analysis

Back to Top