Poster + Paper
27 April 2023 Effective tool induced shift (eTIS) for determining the total measurement uncertainty (TMU) in overlay metrology
Author Affiliations +
Conference Poster
Abstract
Total measurement uncertainty (TMU) is a commonly used key performance indicator (KPI) for tool-induced error in metrology systems. Several definitions of TMU are being used today for overlay metrology (OVL), with the leading definition being the root-sum-square (RSS) of three other KPIs: the wafer mean Tool Induces Shift (TIS𝜇), the wafer variability of TIS (TIS3σ), and the OVL measurement reproducibility (OVL precision). A multitude of TIS management methods has been developed and implemented over the years for calibrating out the raw TIS from OVL. With these TIS management methods in place, the use of the raw TISμ and TIS3σ in TMU no longer serves as a good characterization of the total tool-induced error. In this paper, we describe a procedure for evaluating the actual, post-TIS management, OVL Metrology TMU through the introduction of two new wafer level indicators: the effective wafer means TIS (eTISμ), and the effective wafer TIS variability (eTIS3σ).
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hyunsok Kim, Ikhyun Jeong, Baikkyu Hong, Sejung Ham, Dongsu Kim, Dongsuk Lim, Kangmin Lee, Jeongpyo Lee, Minho Jung, Nanglyeom Oh, Dongsub Choi, Hedvi Spielberg, and Ohad Bachar "Effective tool induced shift (eTIS) for determining the total measurement uncertainty (TMU) in overlay metrology", Proc. SPIE 12496, Metrology, Inspection, and Process Control XXXVII, 124963O (27 April 2023); https://doi.org/10.1117/12.2670420
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KEYWORDS
Semiconducting wafers

Metrology

Calibration

Overlay metrology

Measurement uncertainty

Advanced process control

Optical parametric oscillators

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