Paper
18 December 2023 High power 780nm single emitter with 16W and bar with 180W of continuous-wave output laser diodes
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Abstract
The high power diode lasers emission wavelength around 7xx nm are highly significant as pump sources for developing Rb alkali metal vapor laser and solid-state lasers based on thulium Tm: YAG. In this paper, 780 nm diode laser single emitter and bar have been designed and fabricated. The epitaxial layers were prepared by the metal organic chemical vapor deposition technology. GaAsP and GaInP were used as the quantum well and waveguide layer, respectively. The confinement layers were AlGaInP material with low refractive index. An amorphous ZnSe passivation layer was deposited on the laser cavity facets using ultra-high vacuum cleavage and passivation technology. The single emitter device with 150 μm width and 4 mm cavity length did not show the COMD phenomenon until 16.3 W continuous-wave output at 15 A. Meanwhile, The slope efficiency reached 1.27 W/A, and the electro-optic conversion efficiency was 58%. The divergence angle of slow-axis was 9.9°. In addition, the 1-cm laser bar with lateral emitter fill factors of 30% reached continuous-wave 180 W output power at 192 A, the electro-optic conversion efficiency was 50.7%, and the spectral width was 2.2nm.
(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Yi Li, Haomiao Wang, Weichuan Du, Zhiyu Zhou, Yuwen He, Liang Zhang, Songxin Gao, Deyong Wu, and Chun Tang "High power 780nm single emitter with 16W and bar with 180W of continuous-wave output laser diodes", Proc. SPIE 12959, AOPC 2023: Laser Technology and Applications; and Optoelectronic Devices and Integration, 129591C (18 December 2023); https://doi.org/10.1117/12.3008134
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KEYWORDS
Quantum emitters

Semiconductor lasers

Electro optics

High power lasers

Quantum devices

Waveguides

Emission wavelengths

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