The high power diode lasers emission wavelength around 7xx nm are highly significant as pump sources for developing Rb alkali metal vapor laser and solid-state lasers based on thulium Tm: YAG. In this paper, 780 nm diode laser single emitter and bar have been designed and fabricated. The epitaxial layers were prepared by the metal organic chemical vapor deposition technology. GaAsP and GaInP were used as the quantum well and waveguide layer, respectively. The confinement layers were AlGaInP material with low refractive index. An amorphous ZnSe passivation layer was deposited on the laser cavity facets using ultra-high vacuum cleavage and passivation technology. The single emitter device with 150 μm width and 4 mm cavity length did not show the COMD phenomenon until 16.3 W continuous-wave output at 15 A. Meanwhile, The slope efficiency reached 1.27 W/A, and the electro-optic conversion efficiency was 58%. The divergence angle of slow-axis was 9.9°. In addition, the 1-cm laser bar with lateral emitter fill factors of 30% reached continuous-wave 180 W output power at 192 A, the electro-optic conversion efficiency was 50.7%, and the spectral width was 2.2nm.
KEYWORDS: Semiconductor lasers, Waveguides, Refractive index, Neodymium, Laser applications, Far-field diffraction, High power lasers, Laser energy, Optical resonators, Near field
In this research, the transversal mode of 970 nm broad area laser diode based on a large optical cavity is studied. The vertical far-field patterns were measured to be dependent on the cavity caused facet loss. High-orders modes achieve lasing with higher facet loss while they can be completely suppressed by a low facet loss. The suppression of high-order modes was attributed to be an increase in the discrimination of differential quantum efficiency between high-order modes and the fundamental mode, which matches well with simulation. When the discrimination exceeds probable fluctuations, the high-order modes will be completely suppressed and lasing of single fundamental mode will achieve. According to our experiment results, the optimal resonance cavity length is about 6 mm in order to realize fundamental mode and simultaneously a high slope efficiency. As a consequence, high efficiency 970 nm broad area laser with slope efficiency over 1.07 W/A and full wavelength half maximum (FWHM) less than 2 nm@1A is demonstrated.
In this research, the transversal mode of 970 nm broad area laser diode based on a large optical cavity is studied. The vertical far-field patterns were measured to be dependent on the cavity caused facet loss. High-orders modes achieve lasing with higher facet loss while they can be completely suppressed by a low facet loss. The suppression of high-order modes was attributed to be an increase in the discrimination of differential quantum efficiency between high-order modes and the fundamental mode, which matches well with simulation. When the discrimination exceeds probable fluctuations, the high-order modes will be completely suppressed and lasing of single fundamental mode will achieve. According to our experiment results, the optimal resonance cavity length is about 6 mm in order to realize fundamental mode and simultaneously a high slope efficiency. As a consequence, high efficiency 970 nm broad area laser with slope efficiency over 1.07 W/A and full wavelength half maximum (FWHM) less than 2 nm@1A is demonstrated.
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