Inverted cylindrical magnetron sputtering for HTSC thin film growth

Jochen Geerk

doi:10.1117/12.2321831

1 March 1992 Inverted cylindrical magnetron sputtering for HTSC thin film growth

Jochen Geerk

Proceedings Volume 1597, Progress in High-Temperature Superconducting Transistors and Other Devices II; (1992) https://doi.org/10.1117/12.2321831
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

The Inverted Cylindrical Magnetron Sputtering (ICM) is a reliable and reproducible method for the production of HTSC thin films. This allows systematic studies of film growth as a function of various deposition parameters including film thickness, substrate material or buffer layers. We report the growth conditions and growth quality of ,,l-2-3" films of different orientation with special emphasis on a-axis films which may be of interest for applications if 3-dimensional patterning is attempted. Substrate orientation and substrate temperature are the essential parameters controlling the growth orientation. High quality buffer layers (FWHM mosaic spread <0.2°, x_min,<5% in channeling experiment) of Zr(Y)O₂ could be deposited on R-plane sapphire. Critical current densities near 3 X 10₆ A/cm₂ at 77 K could be achieved for the 1-2-3 films deposited on these buffer layers. Finally we report results of in situ BiSrCaCuO thin film deposition revealing first signs of channeling behaviour (x_min ≈60%) indicating towards epitaxial growth.

Citation Download Citation

Jochen Geerk "Inverted cylindrical magnetron sputtering for HTSC thin film growth", Proc. SPIE 1597, Progress in High-Temperature Superconducting Transistors and Other Devices II, (1 March 1992); https://doi.org/10.1117/12.2321831

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