Detailed feasibility study on a flame detector using AlGaN photosensors

Akira Hirano; C. Pernot; Motoaki Iwaya; T. Detchprohm; Hiroshi Amano; Isamu Akasaki

doi:10.1117/12.382129

13 April 2000 Detailed feasibility study on a flame detector using AlGaN photosensors

Akira Hirano, C. Pernot, Motoaki Iwaya, T. Detchprohm, Hiroshi Amano, Isamu Akasaki

Proceedings Volume 3948, Photodetectors: Materials and Devices V; (2000) https://doi.org/10.1117/12.382129
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

Among the current flame detectors, UV selective photosensor has the highest performance thanks to its high ability to follow the turn down of burners. However, its utilization is limited to industrial-use because of its lifetime of 1-2 years, operation temperature below 120 degrees C, and its high system cost including power supply of 300V and cooling. Accordingly, solid sate flame detector is strongly desired. The required elements for the UV flame detection is as follows: a) photo current given by low intensity light should be greater than dark current; b) high rejection to the background is indispensable. AlGaN was chosen through material selection and feasibility study had been conducted. For a), using pn-GaN grown on single buffer layer, the leakage current comes from both mesa sidewall leakage and tunneling current through PN junction. Both leakages were approximately 2 orders larger to detect 1nW/cm², but thought to be within outreach using multi-buffer crystal growth technique and sensor design. For b), AlGaN photocurrent fabricated on the multibuffer layer has shown responsivity difference of 3 orders at the bandage of 4.4 eV, which satisfied the high rejection in UV region of 300- 400nm.

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Akira Hirano, C. Pernot, Motoaki Iwaya, T. Detchprohm, Hiroshi Amano, and Isamu Akasaki "Detailed feasibility study on a flame detector using AlGaN photosensors", Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); https://doi.org/10.1117/12.382129

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KEYWORDS

Flame detectors

Gallium nitride

Ultraviolet radiation

Sensors

Luminescence

Diodes

Photoresistors

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