Paper
28 February 2006 Numerical studies of effective masses and optical gain in InGaAsN quantum-well structures with self-consistent effects
M. S. Wartak, P. Weetman
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Abstract
We present results of the analysis of effective masses and optical gain on InGaAsN based quantum-well structures. In our work we have considered self-consistent effects which are determined by a simultaneous solution of the Luttinger-Kohn equations for electron and hole wavefunctions and the Poisson equation for heterostructure potential modification. We describe systematic numerical results for a large range of material and structural parameters. Our results show that significant variation in the value of effective masses and optical gain is possible by adjusting the relevant parameters. We also indicate the effects due to self-consistency.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. S. Wartak and P. Weetman "Numerical studies of effective masses and optical gain in InGaAsN quantum-well structures with self-consistent effects", Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 61151S (28 February 2006); https://doi.org/10.1117/12.669094
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KEYWORDS
Nitrogen

Gallium

Gallium arsenide

Gallium nitride

Heterojunctions

Quantum wells

Semiconductor lasers

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