Paper
25 February 2010 Optical properties of atomic layer deposited materials and their application in silicon waveguides
Author Affiliations +
Proceedings Volume 7598, Optical Components and Materials VII; 75980D (2010) https://doi.org/10.1117/12.841524
Event: SPIE OPTO, 2010, San Francisco, California, United States
Abstract
Atomic layer deposition (ALD) is a promising method to grow optical materials on waveguide structures. Propagation loss analysis indicates that amorphous TiO2 and Al2O3 films are promising for the waveguide purposes. Instead, polycrystalline ZnO does not work properly as a waveguide by itself, but the waveguiding properties can probably be enhanced by introducing intermediate Al2O3 layers. The wide variety of available materials, conformal growth properties and low scattering losses of many ALD films enable their usage in various waveguide applications. Experimental coating of silicon waveguides is discussed.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tapani Alasaarela, Jussi Hiltunen, Amit Khanna, Antti Säynätjoki, Ari Tervonen, and Seppo Honkanen "Optical properties of atomic layer deposited materials and their application in silicon waveguides", Proc. SPIE 7598, Optical Components and Materials VII, 75980D (25 February 2010); https://doi.org/10.1117/12.841524
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Zinc oxide

Waveguides

Atomic layer deposition

Titanium dioxide

Silicon

Refractive index

Prisms

Back to Top