Paper
14 March 2015 High-power photodetector modules for microwave photonic applications
Kejia Li, Xiaojun Xie, Efthymios Rouvalis, Sascha Fedderwitz, Andreas G. Steffan, Qinglong Li, Zhanyu Yang, Andreas Beling, Joe C. Campbell
Author Affiliations +
Abstract
Recently, microwave photonic techniques have emerged to address the challenges that microwave systems face under high-frequency or wideband conditions. To a large extent, the performance of microwave photonic systems depends on the performance of individual optoelectronics devices, such as high power photodiodes. Here, we report a fullypackaged photodetector module based on InGaAs/InP modified uni-traveling carrier (MUTC) photodiode. The modules demonstrated a 3-dB bandwidth up to 50GHz and a record-high output power of 14.0 dBm at 50GHz.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kejia Li, Xiaojun Xie, Efthymios Rouvalis, Sascha Fedderwitz, Andreas G. Steffan, Qinglong Li, Zhanyu Yang, Andreas Beling, and Joe C. Campbell "High-power photodetector modules for microwave photonic applications", Proc. SPIE 9362, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VIII, 93620X (14 March 2015); https://doi.org/10.1117/12.2078214
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KEYWORDS
Photodiodes

Photodetectors

Microwave photonics

Palladium

Capacitance

Aluminum nitride

Resistance

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