In this work, we demonstrate a high-performance ultraviolet phototransistor (UVPT) based on the AlGaN/GaN high-electron-mobility transistor (HEMT) configuration. When the device is biased at off state, the peak photoresponsivity of 3.6×107 A/W under 265nm illumination and 1.0×106 A/W under 365nm illumination can be obtained. Those two responsivity values have achieved the highest among the reported UVPTs at the same detection wavelength under off-state conditions. Furthermore, we observed a distinct difference between the rise time and decay time of the device under 265 nm and 365 nm light illumination which can be attributed to the unique device operating principle of the constructed AlGaN/GaN-based UVPT structure with different absorption mechanisms in the device.
A deep ultraviolet LED structure with a double-side step n-AlGaN inserted layer was constructed to alleviate the electron leakage and improve confinement capability of holes, thus enhancing the optical power and the internal quantum efficiency.
Nowadays, power-independent, compact, and highly environment-sensitive self-powered photoelectrochemical-type photodetectors (PEC−PDs) have lately intrigued intensive interest to realize next-generation optoelectronic systems. Herein, we demonstrate p-AlGaN nanowire-based self-powered solar-blind PEC-PDs. After decorating nanowires with noble metal platinum (Pt), the constructed solar-blind PEC−PDs exhibited excellent responsivity of 45 mA/W, fast response/recovery time of 47/20 ms. Such high solar-blind photodetection originates from the unparalleled material quality, fast interfacial kinetics, as well as high carrier separation efficiency which suggests that using AlGaN nanowires with appropriate surface decoration offers an unprecedented opportunity for designing future energy-efficient and large-scale optoelectronic systems on a silicon platform.
The single-crystalline GaN nanowires play crucial roles in the pursuit of modern nanophotonic and nanoelectronic devices. Here, a photoelectrochemical-type ultraviolet photodetector consisting of GaN p-n junction nanowires as photoelectrodes is constructed. It is found that two competing charge transport processes co-determine the photoresponsive behavior of the device. Furthermore, the surface platinum (Pt) decoration has successfully tuned the charge transfer dynamics by enhancing the charge transport efficiency of the one process at the surface, resulting in a twenty-fold increase of the photocurrent. Theoretical calculations reveal that the high photoresponse benefits from the newly formed electronic states at the Pt/GaN interface and the optimized hydrogen adsorption energy.
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