Prof. Guang-di Shen
Director, Beijing Optoelectronic Technology Lab at Beijing Univ of Technology
SPIE Involvement:
Author
Publications (17)

Proceedings Article | 19 February 2015 Paper
Li Ma, Guang-di Shen, Chen Xu, Zhi-Yuan Gao
Proceedings Volume 9449, 94491R (2015) https://doi.org/10.1117/12.2083261
KEYWORDS: Light emitting diodes, Silica, Electrodes, Gallium arsenide, Aluminium gallium indium phosphide, Cladding, Scanning electron microscopy, Absorption, Internal quantum efficiency, Refractive index

Proceedings Article | 29 November 2012 Paper
Qiang Wang, Baolu Guan, Guozhu Shi, Xin Liu, Xia Guo, Guangdi Shen
Proceedings Volume 8552, 85520S (2012) https://doi.org/10.1117/12.999415
KEYWORDS: Liquid crystals, Vertical cavity surface emitting lasers, Birefringence, Refractive index, Quantum wells, Gallium arsenide, Polymers, Mirrors, Active optics, Molecules

Proceedings Article | 29 November 2012 Paper
Guo-Zhu Shi, Bao-Lu Guan, Xia Guo, Shuo Li, Qiang Wang, Guang-Di Shen
Proceedings Volume 8552, 85520R (2012) https://doi.org/10.1117/12.999410
KEYWORDS: Vertical cavity surface emitting lasers, Microelectromechanical systems, Mirrors, Laser damage threshold, Oxides, Wavelength tuning, Gallium arsenide, Interfaces, Etching, Microscopes

Proceedings Article | 29 November 2012 Paper
Proceedings Volume 8552, 855209 (2012) https://doi.org/10.1117/12.979656
KEYWORDS: Vertical cavity surface emitting lasers, Photonic crystals, Reflectivity, Mirrors, Quantum wells, Semiconductors, Dielectrics, Electroluminescence, Semiconductor lasers, Electromagnetic radiation

Proceedings Article | 3 December 2009 Paper
Rong Fang, Wen Jing Jiang, Xia Guo, Jin Ru Han, Guang Di Shen
Proceedings Volume 7631, 76310S (2009) https://doi.org/10.1117/12.850056
KEYWORDS: Etching, Plasma, Plasma etching, Scanning electron microscopy, Ions, Reactive ion etching, Oxides, Photoresist materials, Dry etching, Polymers

Showing 5 of 17 publications
Conference Committee Involvement (2)
Semiconductor Lasers and Applications IV
18 October 2010 | Beijing, China
Semiconductor Lasers and Applications III
12 November 2007 | Beijing, China
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