Prof. Lianghui Chen Profile

Prof. Lianghui Chen

Associate Professor at Institute of Semiconductors CAS

SPIE Involvement:

Author | Editor

Publications (40)

Proceedings Article | 8 November 2024 Paper

High-power 808nm VCSEL arrays for Nd:YAG pumping

Yang Li, Chuanchuan Li, Chongxian Yuan, Yongli Wang, Xin Wei, Lianghui Chen

Proceedings Volume 13233, 132330P (2024) https://doi.org/10.1117/12.3054213

KEYWORDS: Vertical cavity surface emitting lasers, Nd:YAG lasers, Chip manufacturing, Continuous wave operation, High power lasers, Semiconductor lasers, Optical pumping, Diode pumped solid state lasers, Quasi continuous wave operation

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Proceedings Article | 15 October 2015 Paper

High-power and low-loss room temperature operation of 2.4μm GaInAsSb/AlGaAsSb type-I strained quantum-well laser diodes

Yuzhi Song, Jiakun Song, Yu Zhang, Kangwen Li, Yun Xu, Guofeng Song, Lianghui Chen

Proceedings Volume 9671, 96710P (2015) https://doi.org/10.1117/12.2199252

KEYWORDS: Semiconductor lasers, Quantum wells, Internal quantum efficiency, Continuous wave operation, Laser damage threshold, High power lasers, Gallium antimonide, Cladding, Semiconducting wafers, Molecular beam epitaxy

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SPIE Journal Paper | 1 January 2011

Double plasmonic structure design for broadband absorption enhancement in molecular organic solar cells

Wenli Bai, Qiaoqiang Gan, Guofeng Song, Lianghui Chen, Zakya Kafafi, Filbert Bartoli

JPE, Vol. 1, Issue 1, 011121, (January 2011) https://doi.org/10.1117/12.10.1117/1.3585876

KEYWORDS: Absorption, Plasmonics, Nanostructures, Metals, Solar cells, Structural design, Organic photovoltaics, Solar energy, Thin films, Interfaces

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Proceedings Article | 13 November 2010 Paper

High brightness InAs/GaAs quantum dot tapered laser at 1.3 µm with high temperature stability

Yu-Lian Cao, Peng-Fei Xu, Hai-Ming Ji, Tao Yang, Liang-Hui Chen

Proceedings Volume 7844, 784404 (2010) https://doi.org/10.1117/12.869637

KEYWORDS: Temperature metrology, Laser damage threshold, Quantum dots, Laser stabilization, Waveguides, Semiconductor lasers, Optical filters, Semiconducting wafers, Thermal effects, Laser development

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Proceedings Article | 18 November 2008 Paper

Highly stable white light from ultraviolet laser diode

Yun Xu, Haifeng Hu, Weidong Zhuang, Guofeng Song, Yuzhang Li, Lianghui Chen

Proceedings Volume 7135, 71352A (2008) https://doi.org/10.1117/12.804269

KEYWORDS: Luminous efficacy, Semiconductor lasers, Light emitting diodes, Ultraviolet radiation, Light sources, Temperature metrology, Indium gallium nitride, Near ultraviolet, Light, Blue light emitting diodes

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Proceedings Article | 11 March 2008 Paper

Single dipole mode photonic crystal laser on InGaAsP/InP QW waveguide slab

Wanhua Zheng, Minxin Xing, Gang Ren, Xiaoyu Du, Ke Wang, Lianghui Chen

Proceedings Volume 6984, 698436 (2008) https://doi.org/10.1117/12.792398

KEYWORDS: Photonic crystals, Waveguides, Quantum wells, Laser crystals, Optical microcavities, Refractive index, Near field, Semiconductor lasers, Semiconductors, Dielectrics

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Proceedings Article | 11 March 2008 Paper

Mode analysis of photonic crystal polarization beam splitter and its application in integrated circuits design

Gang Ren, Wanhua Zheng, Yejin Zhang, Ke Wang, Xiaoyu Du, Mingxin Xing, Lianghui Chen

Proceedings Volume 6984, 698437 (2008) https://doi.org/10.1117/12.792401

KEYWORDS: Waveguides, Photonic crystals, Polarization, Beam splitters, Integrated circuit design, Light wave propagation, Integrated circuits, Photonic integrated circuits, Semiconductors, Integrated optical circuits

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Proceedings Article | 11 March 2008 Paper

The whispering gallery mode in photonic crystal ring cavity

Mingxin Xing, Wanhua Zheng, Yejin Zhang, Gang Ren, Xiaoyu Du, Ke Wang, Lianghui Chen

Proceedings Volume 6984, 698438 (2008) https://doi.org/10.1117/12.792403

KEYWORDS: Photonic crystals, Optical microcavities, Finite-difference time-domain method, Magnetism, Photonic integrated circuits, Refractive index, Reflection, Semiconductors, Integrated photonics, Integrated circuit design

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Proceedings Article | 6 October 2006 Paper

Direct wafer bonding technology employing vacuum-cavity pre-bonding

Guohua Yang, Guorong He, Wanhua Zheng, Lianghui Chen

Proceedings Volume 6352, 63523I (2006) https://doi.org/10.1117/12.688864

KEYWORDS: Semiconducting wafers, Wafer bonding, Infrared imaging, Image transmission, Interfaces, Gallium arsenide, Semiconductors, Annealing, Protactinium, Scanning electron microscopy

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SPIE Journal Paper | 1 March 2006

High-power AlGaInP laser diodes with current-injection-free region near the laser facet

Yun Xu, Yuzhang Li, Qiaoqiang Gan, Qing Cao, Guofeng Song, Liang Guo, Lianghui Chen

OE, Vol. 45, Issue 03, 034205, (March 2006) https://doi.org/10.1117/12.10.1117/1.2185567

KEYWORDS: Aluminium gallium indium phosphide, Semiconductor lasers, High power lasers, Optical engineering, Chemical vapor deposition, Metalorganic chemical vapor deposition, Quantum wells, Cladding, Continuous wave operation, Gallium

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Proceedings Article | 6 December 2005 Paper

High-output very small aperture laser and its near-field distribution properties

Qiaoqiang Gan, Suofeng Song, Lianghui Chen

Proceedings Volume 6020, 60200L (2005) https://doi.org/10.1117/12.635973

KEYWORDS: Near field, Gold, Near field optics, Semiconductor lasers, Diodes, Metals, Data storage, Light sources, Electrodes, Fiber coatings

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Proceedings Article | 3 December 2005 Paper

Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method

Yun Xu, Yuzhang Li, Guofeng Song, Qiaoqiang Gan, Qing Cao, Liang Guo, Lianghui Chen

Proceedings Volume 6020, 60202F (2005) https://doi.org/10.1117/12.636130

KEYWORDS: Semiconductor lasers, Metalorganic chemical vapor deposition, Chemical analysis, Aluminium gallium indium phosphide, Temperature metrology, Ions, Mass spectrometry, Doping, Laser damage threshold, Cladding

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Proceedings Article | 31 January 2005 Paper

Theoretical analysis of the bandgap for the intermixed GaInP/AlGaInP quantum wells

Yun Xu, Xiaopeng Zhu, Guofeng Song, Qing Cao, Liang Guo, Yuzhang Li, Lianghui Chen

Proceedings Volume 5624, (2005) https://doi.org/10.1117/12.575291

KEYWORDS: Quantum wells, Diffusion, Aluminum, Gallium, Chemical species, Indium gallium phosphide, Optoelectronic devices, Solids, Semiconductors, Interfaces

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Proceedings Article | 31 January 2005 Paper

Calculation of valence subband structures for strained GaInP/AlGaInP quantum wells without axial approximation

Yun Xu, Xiaopeng Zhu, Qiaoqiang Gan, Guofeng Song, Qing Cao, Liang Guo, Yuzhang Li, Lianghui Chen

Proceedings Volume 5624, (2005) https://doi.org/10.1117/12.574932

KEYWORDS: Quantum wells, Gallium, Semiconductors, Finite difference methods, Indium gallium phosphide, Optoelectronic devices, Numerical simulations, Digital video discs, Physics, Epitaxy

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Proceedings Article | 8 December 2004 Paper

Liquid nitrogen flowrate alarm system for MBE

Yongwei Sun, Shuying Li, Haiqiao Ni, Yun Xu, Lianghui Chen

Proceedings Volume 5774, (2004) https://doi.org/10.1117/12.608046

KEYWORDS: Nitrogen, Liquids, Temperature sensors, Semiconductors, Molecules, Temperature metrology, Software development, Sun, Lithium, Nickel

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Proceedings Article | 12 May 2004 Paper

Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure

Yun Xu, Xiaopeng Zhu, Xiaojun Ye, Xiangning Kang, Qing Cao, Liang Guo, Lianghui Chen

Proceedings Volume 5280, (2004) https://doi.org/10.1117/12.520418

KEYWORDS: Waveguides, Semiconductor lasers, Aluminium gallium indium phosphide, Aluminum, Refractive index, Cladding, Near field optics, Gallium, Finite difference methods, Epitaxy

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Proceedings Article | 9 October 2000 Paper

Novel large-coupled optical cavity semiconductor lasers and multiactive region light-emitting diodes with high performance

Guangdi Shen, Peng Lian, Xia Guo, Tao Yin, Changhua Chen, Guohong Wang, Jinyu Du, Bifeng Cui, Jianjun Li, Ying Liu, Guo Gao, Deshu Zou, Jianxing Chen, Xiaoyu Ma, Lianhui Chen

Proceedings Volume 4225, (2000) https://doi.org/10.1117/12.402741

KEYWORDS: Light emitting diodes, Semiconductor lasers, Quantum efficiency, Optical resonators, External quantum efficiency, Quantum wells, Luminous efficiency, Laser optics, Gallium arsenide, Pulsed laser operation

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Proceedings Article | 18 April 2000 Paper

High-efficiency low-vertical-divergence-angle 980-nm Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers

ZunTu Xu, Jing-Ming Zhang, Xiaoyu Ma, Guowen Yang, Guangdi Shen, Lianhui Chen

Proceedings Volume 3947, (2000) https://doi.org/10.1117/12.382108

KEYWORDS: Quantum efficiency, Semiconductor lasers, Optical resonators, Cladding, Fiber lasers, Quantum wells, Waveguides, Single mode fibers, Laser optics, Internal quantum efficiency

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Proceedings Article | 17 April 2000 Paper

Native oxided AlAs current blocking layer for AlGaInP high-brightness light-emitting diodes

Guohong Wang, Xiaoyu Ma, Yufang Zhang, Shutang Wang, Yuzhang Li, Lianhui Chen

Proceedings Volume 3938, (2000) https://doi.org/10.1117/12.382826

KEYWORDS: Light emitting diodes, Aluminium gallium indium phosphide, Oxides, Gallium arsenide, Critical dimension metrology, Lamps, Reliability, Optical properties, Metalorganic chemical vapor deposition, Oxidation

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Proceedings Article | 9 November 1999 Paper

650-nm AlGaInP quantum well lasers for the application of DVD

Lianhui Chen, Xiaoyu Ma, Liang Guo, Jun Ma, Hongyu Ding, Qing Cao, Liming Wang, Guangzhe Zhang, Yali Yang, Guohong Wang, Manqing Tan

Proceedings Volume 3899, (1999) https://doi.org/10.1117/12.369422

KEYWORDS: Semiconductor lasers, Digital video discs, Aluminium gallium indium phosphide, Quantum wells, Cladding, Gallium arsenide, Waveguides, Indium gallium phosphide, Heterojunctions, Laser damage threshold

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