Jacqueline Dahlmanns, Thomas Bussek, Annika Völl, Jochen Stollenwerk, Carlo Holly, Günther Derra, Markus Herper, Ralf Conrads, Holger Mönch, Felix Ogiewa
High power VCSEL systems are a versatile and powerful tool for thermal treatment in industrial production where they enable a very homogeneous and locally controllable irradiance distribution at small working distances. Due to the inherent divergence of VCSELs, both characteristics degrade with increasing working distance. Depending on the size of the used VCSEL system, already at distances of about 100 mm the irradiation is not homogenous anymore and the local controllability is strongly limited already at even smaller distances. To extend the application range of VCSEL systems for increased working distances while maintaining homogeneity and local controllability, two multi-aperture beam integrators have been designed. Simulation results as well as measurements of a prototype system are presented in this work.
Easy system design, compactness and a uniform power distribution define the basic advantages of high power VCSEL
systems. Full addressability in space and time add new dimensions for optimization and enable “digital photonic
production”. Many thermal processes benefit from the improved control i.e. heat is applied exactly where and when it is
needed. The compact VCSEL systems can be integrated into most manufacturing equipment, replacing batch processes
using large furnaces and reducing energy consumption. This paper will present how recent technological development of
high power VCSEL systems will extend efficiency and flexibility of thermal processes and replace not only laser
systems, lamps and furnaces but enable new ways of production.
High power VCSEL systems are made from many VCSEL chips, each comprising thousands of low power VCSELs.
Systems scalable in power from watts to multiple ten kilowatts and with various form factors utilize a common modular
building block concept. Designs for reliable high power VCSEL arrays and systems can be developed and tested on each
building block level and benefit from the low power density and excellent reliability of the VCSELs. Furthermore
advanced assembly concepts aim to reduce the number of individual processes and components and make the whole
system even more simple and reliable.
The learning gained in previous developments for EUV Micro Exposure and Alpha Tools builds the basis for the EUVL
source development at XTREME technologies and Philips EUV. Field data available from operation of these tools are in
use for continuous improvements in core technology areas such as plasma generation and forming, component reliability,
debris mitigation and optical performance.
Results from integration and operation of alpha tool sources are presented in the areas power performance, component
lifetime and debris mitigation efficiency. The analysis results and simulation work of the realized EUV source concept
are discussed and innovative concepts for component and module improvements are introduced.
The technological limit for the Xenon based sources seems to be reached on alpha performance level. Therefore the next
EUV source generations are based on Tin to increase the efficiency and full performance of those sources. For the Betatool
and HVM source generations a joint development work between XTREME technologies and Philips EUV is
introduced. The related work is content of another presentation of this conference.
For industrial EUV (extreme ultra-violet) lithography applications high power extreme ultraviolet (EUV) light sources are needed at a central wavelength of 13.5 nm, targeting 32 nm node and below. Philips Extreme UV GmbH and XTREME technologies GmbH have developed DPP (Discharge Produced Plasma) Alpha tools which run in operation at several locations in the world. In this paper the status of the Alpha Sn-DPP tools as developed by Philips Extreme UV GmbH will be given. The Alpha DPP tools provide a good basis for the development and engineering of the Beta tools and in the future of the HVM tools. The first Beta source has been designed and first light has been produced. Engineering steps will folow to optimize this first generation Beta Sn-DPP source. HVM tools target EUV power levels from 200W to 500W in IF. In this paper we show that the power requried for HVM can be generated with Sn-DPP sources. Based on Alpha Sn-DPP sources we show that repetition frequency and generated EUV pulse energy is scalable up to power levels that match the HVM requirements.
Joseph Pankert, Rolf Apetz, Klaus Bergmann, Marcel Damen, Günther Derra, Oliver Franken, Maurice Janssen, Jeroen Jonkers, Jürgen Klein, Helmar Kraus, Thomas Krücken, Andreas List, Micheal Loeken, Arnaud Mader, Christof Metzmacher, Willi Neff, Sven Probst, Ralph Prümmer, Oliver Rosier, Stefan Schwabe, Stefan Seiwert, Guido Siemons, Dominik Vaudrevange, Dirk Wagemann, Achim Weber, Oliver Zitzen
In this paper, we report on the recent progress of the Philips Extreme UV source. The Philips source concept is based on a discharge plasma ignited in a Sn vapor plume that is ablated by a laser pulse. Using rotating electrodes covered with a regenerating tin surface, the problems of electrode erosion and power scaling are fundamentally solved.
Most of the work of the past year has been dedicated to develop a lamp system which is operating very reliably and stable under full scanner remote control. Topics addressed were the development of the scanner interface, a dose control system, thermo-mechanical design, positional stability of the source, tin handling, and many more.
The resulting EUV source-the Philips NovaTin(R) source-can operate at more than 10kW electrical input power and delivers 200W in-band EUV into 2π continuously. The source is very small, so nearly 100% of the EUV radiation can be collected within etendue limits. The lamp system is fully automated and can operate unattended under full scanner remote control. 500 Million shots of continuous operation without interruption have been realized, electrode lifetime is at least 2 Billion shots. Three sources are currently being prepared, two of them will be integrated into the first EUV Alpha Demonstration tools of ASML.
The debris problem was reduced to a level which is well acceptable for scanner operation. First, a considerable reduction of the Sn emission of the source has been realized. The debris mitigation system is based on a two-step concept using a foil trap based stage and a chemical cleaning stage. Both steps were improved considerably. A collector lifetime of 1 Billion shots is achieved, after this operating time a cleaning would be applied. The cleaning step has been verified to work with tolerable Sn residues. From the experimental results, a total collector lifetime of more than 10 Billion shots can be expected.
Joseph Pankert, Rolf Apetz, Klaus Bergmann, Guenther Derra, Maurice Janssen, Jeroen Jonkers, Jurgen Klein, Thomas Kruecken, Andreas List, Michael Loeken, Christof Metzmacher, Willi Neff, Sven Probst, Ralph Prummer, Oliver Rosier, Stefan Seiwert, Guido Siemons, Dominik Vaudrevange, Dirk Wagemann, Achim Weber, Peter Zink, Oliver Zitzen
The paper describes recent progress in the development of the Philips's EUV source. Progress has been realized at many frontiers: Integration studies of the source into a scanner have primarily been studied on the Xe source because it has a high degree of maturity. We report on integration with a collector, associated collector lifetime and optical characteristics. Collector lifetime in excess of 1 bln shots could be demonstrated. Next, an active dose control system was developed and tested on the Xe lamp. Resulting dose stability data are less than 0.2% for an exposure window of 100 pulses. The second part of the paper reports on progress in the development of the Philips' Sn source. First, the details of the concept are described. It is based on a Laser triggered vacuum arc, which is an extension with respect to previous designs. The source is furbished with rotating electrodes that are covered with a Sn film that is constantly regenerated. Hence by the very design of the source, it is scalable to very high power levels, and moreover has fundamentally solved the notorious problem of electrode erosion. Power values of 260 W in 2p sr are reported, along with a stable, long life operation of the lamp. The paper also addresses the problem of debris generation and mitigation of the Sn-source. The problem is attacked by a combined strategy of protection of the collector by traditional means (e.g. fields, foiltraps... ), and by designing the gas atmosphere according to the principles of the well known halogen cycles in incandescent lamps. These principles have been studied in the Lighting industry for decades and rely on the excessively high vapor pressures of metal halides. Transferred to the Sn source, it allows pumping away tin residues that would otherwise irreversibly deposit on the collector.
Joseph Pankert, Klaus Bergmann, Juergen Klein, Willi Neff, Oliver Rosier, Stefan Seiwert, Christopher Smith, Sven Probst, Dominik Vaudrevange, Guido Siemons, Rolf Apetz, Jeroen Jonkers, Michael Loeken, Guenther Derra, Thomas Kruecken, Peter Zink
The paper describes progress of the Philips’ hollow cathode triggered (HCT) gas discharge EUV source. The program
has been focussed on three major areas: (1) Studying the basic physics of ignition, pinch formation and EUV
generation. The paper reports on progress in this area and particularly describes the underlying atomic physics both for
Xe and Sn. (2) Discharge based on Sn. Results on overall efficiency more than 5 times the Xe efficiency are reported as
well as high frequency operation up to 6.5 kHz. This system shows all the necessary ingredients for scaling to
production power levels. (3) Integration of the Xe source in an alpha tool. Results on integration issues like electrode
life time, collector life time and dose control will be presented.
Joseph Pankert, Klaus Bergmann, Juergen Klein, Willi Neff, Oliver Rosier, Stefan Seiwert, Christopher Smith, Sven Probst, Dominik Vaudrevange, Guido Siemons, Rolf Apetz, Jeroen Jonkers, Michael Loeken, Eric Bosch, Guenther Derra, Thomas Kruecken, Peter Zink
The paper describes recent progress on the development of an EUV source based on a hollow cathode triggered gas discharge (HCT). The principle of operation has been described in previous publications. When operated with Xe, a repetition frequency up to 4 kHz, conversion efficiency of 0.55% inband radiation in 2π and a pinch size below 3mm in length was demonstrated. Today's requirements on a commercial EUV source for volume production of wafers still exceed the current performance by large factors both in terms of output power and life time. This paper will discuss the roadmap to high power and will also show elements of the way to extended life time. Particular focus will be put onto the physical limits of Xe as radiator and the advantages of using Sn instead. It will be demonstrated that the spectral efficiency of Sn is a factor of 3 higher than Xe.
The collection efficiency is one of the most important characteristics of a source in an EUV lithography system. It is defined as the fraction of the total in-band EUV radiation power which can actually be picked up and used in the subsequent total optical path of an EUV projection system down to the wafer. It is not a property of the source alone, but is determined both by the details of the optical system with its etendue limitations and by the geometrical intensity distribution of source plasma. Until now, the source performance had to be evaluated by ray-tracing calculations of the complete optical lithographic system including the source, which were quite time-consuming. Therefore, a simple and fast, but still reliable method for evaluation of collection efficiency has been developed which is based on taking pinhole images of the source plasma with a CCD camera. From these, a source intensity distribution is constructed, which is used as input to a subsequent simple projection algorithm. By taking into account radiation from an "allowed" source volume only, which is constructed beforehand by rigorous ray tracing, the actual collected power and the collection efficiency is calculated. Comparison with detailed raytracing model calculations of the complete optical system indicate the good accuracy of the method. It can be used in a simple way for source optimization and enables reliable evaluation and specification of source performance in EUV projection systems.
Joseph Pankert, Klaus Bergmann, J. Klein, Willi Neff, Oliver Rosier, Stefan Seiwert, Christopher Smith, Rolf Apetz, Jeroen Jonkers, Michael Loeken, Guenther Derra
The paper describes the physical properties and recent technical advances of the hollow cathode triggered pinch device (HCT) for the generation of EUV radiation. In previous publications we have demonstrated continuous operation of the untriggered device at 1 kHz in pure Xe. The newer generations operate with a triggering facility which allows a wider parameter space under which stable operation is possible. Repetition frequencies of up to 4 kHz could be demonstrated. Many of the experiments are performed in repetitive bursts of variable lengths and spacing. This allows also to demonstrate that there is only little transient behavior upon switching on and off the source. Conversion efficiencies into the 2 percent frequency band around 13.5 nm are about 0.4 percent in 2p, comparable to the values reported from other groups. Another important parameter is the size of the light emitting region. Here we have studied the influence of electrode geometry and flow properties on the size, to find a best match to the requirements of the collection optics. A major problem for the design of a complete wafer illumination system is the out-of-band portion of the radiation. Especially the DUV fraction of the source spectrum is a concern because it is also reflected to some extend by the Mo-Si multilayer mirrors. We show that the source has a low overall non-EUV part of the emission. In particular, it is demonstrated that there is very little DUV coming out of the usable source volume, well below the specified level.
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