Based on collection effect of photogenerated carrier, the front-illuminated planar type InGaAs short-wave infrared (SWIR) detectors were fabricated by using N-InP/i-In0.53Ga0.47As/N-InP double-hetero structure materials. The series of detectors with the same dimension of 200μm×200μm contain several lateral collection regions and the width of each collection region is 15μm. The photoelectric characteristics of the photoresponse, I-V, spectral response and detectability of detectors with the lateral collection structure and normal structure were further analyzed. The build-in electrical field could effectively collect the electron/hole pairs generated in the lateral collection regions, so the photoresponse of lateral collection detector at 296 K is quite uniform by the laser beam induced current (LBIC) technology. Furthermore, the average peak detectivity and the density of dark current of the detectors with lateral collection structure reached 2.90× 1012 cm·Hz1/2/W and 3.94 nA/cm2 at -0.1 V respectively. It turns out that the lateral collection structure could effectively improve the dark current properties compared with the normal structure.
In order to study the effect of different passivation films on the detector performance, the front-illuminated planar-type 256×1 element InGaAs/InP detectors were fabricated with SiNx film and SiO2 film. The SiNx film was deposited by plasma enhanced chemical vapor deposition (PECVD) and SiO2 film was deposited by magnetron sputtering technology. The electrical properties and photoresponse characteristics were investigated after the detector mounted on dewar. The photoresponse maps from laser beam induced current (LBIC) method show that the isolation of adjacent elements of the detector with SiNx film is better than the detector with SiO2 film. Furthermore, at room temperature the average density of dark current and the average peak detectivity of the two kinds of detector is 26.8 nA/cm2 and 41.2 nA/cm2 at 100 mV reverse bias, 1.21×1012 cm·Hz1/2/W and 1.08×1012 cm·Hz1/2/W respectively. Therefore, the detector with SiNx film deposited by PECVD could availably passivate the surface in comparison with the detector with SiO2 film by magnetron sputtering technology.
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