The factors critical to the fabrication of high-lumen InGaN flip chip LEDs are discussed. It is shown that as the die size and the current density increase, the n-GaN sheet conductivity becomes extremely critical to uniform current spreading and the corresponding uniformity of light emission. It is observed that a thick p-metal is important in reducing hot spot formation. The p-contact is also critical to increasing light extraction efficiency and wall-plug efficiency. The merits and reliability of Al- and Ag-based p-contacts are compared. Reliability issues related to the n-contact are also discussed. Finally, performance data for InGaN blue lamps, for drive currents up to 900 mA is shown.
The requirements for maximizing the external quantum efficiency of UV nitride LEDs are discussed. It is shown that as the chip wavelength progressively decreases, nitride epi growth on a sapphire substrate becomes advantageous in terms of light extraction. The epilayer requirements for UV LEDs dictate the growth of n-AlGaN, with increasing Al contents, and the growth of UV-transparent p-GaN. It is shown that MOCVD growth in a Emcore D-180 or Ganzilla reactor is ideal for meeting the stringent epilayer requirements. Increasing light extraction efficiency and wall-plug efficiency also requires optimization of the reflecting P-contact. The relative merits of Al- and Ag-based reflecting contacts are discussed. Performance data for UV LEDs on sapphire, for drive currents up to 700 mA is shown. Finally, a practical high power UV-based white lamp is demonstrated.
In modern GaN-based light-emitting diodes (LEDs) structures, total internal reflection (TIR) limits light extraction, and consequently, overall efficiency of the light source. Proper chip and package material combinations as well as surface property modifications offer the opportunity to reduce the luminous flux lost due to TIR and absorption. Different sepa-ration techniques are taking influence on substrate surface properties and thus on light extraction improvement. Imple-menting all these factors in a flexible ray tracing model and applying effective mathematical optimization, helps to refine a chip design in a fast and accurate way to achieve a significant increase of the light extraction. Based on experimental data and ray trace modeling, the effects of chip size scaling, surface roughness and encapsulation on light extraction val-ues will be demonstrated.
Increasing optical power and electrical-to-optical conversion efficiency enable visible light-emitting diodes to advance into new applications and wider markets. InGaAlP/GaAs and InGaN/sapphire material systems cover the whole visible spectrum of saturated colors used for display, signage, and automotive use. A combination of blue InGaN LEDs with phosphor delivers a 'white' spectrum adequate for most lighting needs. Demand for high optical power requires larger chips suitable for high-current operation. Current crowding effects and their negative consequences for chip performance and reliability limit the performance of high-power chips based on both material systems. Despite the differences between InGaAlP/GaAs and InGaN/sapphire chip structures, a number of common design concepts leading to higher external efficiency and total luminous output have been proposed, including large chips operating at high drive currents. This paper highlights fundamental current spreading and reliability issues related to the chip size and operating current density, outlines a framework for quantitative analysis, proposes and compares a number of novel high-power chip designs.
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