Dr. Julius Joseph S. Santillan Profile

Dr. Julius Joseph S. Santillan

Senior Researcher at AIST

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Author

Publications (38)

Proceedings Article | 1 May 2023 Presentation + Paper

Single-component silicon-based patterning materials for EUV lithography

Julius Joseph Santillan, Akihiro Konda, Motoharu Shichiri, Toshiro Itani

Proceedings Volume 12498, 1249814 (2023) https://doi.org/10.1117/12.2657889

KEYWORDS: Extreme ultraviolet lithography, Electron beam lithography, FT-IR spectroscopy, Lithography, Silicon, Film thickness

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Proceedings Article | 16 March 2021 Presentation + Paper

Alternative developer solution/process for EUV lithography: ethyltrimethylammonium hydroxide (ETMAH)

Julius Joseph Santillan, Masahiko Harumoto, Tomohiro Motono, Andreia Figueiredo dos Santos, Chisayo Mori, Yuji Tanaka, Harold Stokes, Masaya Asai, Toshiro Itani

Proceedings Volume 11609, 116090W (2021) https://doi.org/10.1117/12.2583753

KEYWORDS: Extreme ultraviolet lithography, Scanning electron microscopy, Photoresist processing, Extreme ultraviolet, Optical lithography, Medium wave, Line width roughness, Line edge roughness, Semiconductors, Lithography

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Proceedings Article | 14 October 2020 Poster + Presentation + Paper

Alternative EUVL resist processes for stochastic defect reduction

Julius Joseph Santillan, Masahiko Harumoto, Harold Stokes, Chisayo Mori, Yuji Tanaka, Tomohiro Motono, Masaya Asai, Toshiro Itani

Proceedings Volume 11517, 1151718 (2020) https://doi.org/10.1117/12.2572771

KEYWORDS: Stochastic processes, Photoresist processing, Extreme ultraviolet lithography, Optical lithography, Standards development, Bridges, Line width roughness, Lithography

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Proceedings Article | 23 March 2020 Paper

KrF excimer laser-based patterning system for dual applications in both lithography and ablation

Julius Joseph Santillan, Nobutaka Uemori, Hiroshi Yamaoka, Toshiro Itani

Proceedings Volume 11327, 113271B (2020) https://doi.org/10.1117/12.2551894

KEYWORDS: Optical lithography, Excimer lasers, Laser applications, Laser systems engineering, Laser ablation, Semiconductors, Packaging

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Proceedings Article | 23 March 2020 Paper

Application of alternative developer solutions for EUV lithography

Julius Joseph Santillan, Masahiko Harumoto, Harold Stokes, Chisayo Mori, Yuji Tanaka, You Arisawa, Tomohiro Motono, Masaya Asai, Toshiro Itani

Proceedings Volume 11323, 113231W (2020) https://doi.org/10.1117/12.2551891

KEYWORDS: Extreme ultraviolet lithography, Photoresist processing, Optical lithography, Semiconductors, Lithography

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Proceedings Article | 28 June 2019 Paper

Analysis of line-and-space patterns of ZrO2 nanoparticle resist on the basis of EUV sensitization mechanism

Takahiro Kozawa, Teppei Yamada, Ayako Nakajima, Yusa Muroya, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 10957, 109570C (2019) https://doi.org/10.1117/12.2515133

KEYWORDS: Nanoparticles, Line width roughness, Metals, Oxides, X-rays, Reflectivity, Extreme ultraviolet, Zirconium dioxide, Extreme ultraviolet lithography

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Proceedings Article | 12 October 2018 Presentation

Pattern formation mechanism of zirconia nanoparticle resist used for extreme-ultraviolet lithography (Conference Presentation)

Takahiro Kozawa, Teppei Yamada, Satoshi Ishihara, Hiroki Yamamoto, Yusa Muroya, Julius J. Santillan, Toshiro Itani

Proceedings Volume 10809, 108090I (2018) https://doi.org/10.1117/12.2501647

KEYWORDS: Nanoparticles, Zirconium dioxide, Extreme ultraviolet lithography, Metals, Oxides, Chemically amplified resists, Line edge roughness, Diffusion, Polymers, Stochastic processes

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The performance of chemically amplified resist is approaching its physical limit with the reduction of feature sizes due to the acid diffusion needed for the solubility change of resist polymer. The line edge roughness (LER) of chemically amplified resists rapidly increases in the sub-10-nm-half-pitch region when the half-pitch is decreased. Also, the stochastic defect (pinching and bridges) generation is a significant concern for the high resolution patterning with high throughput. To solve these problems, the increase of the density of resist films is an important strategy. Metal oxide nanoparticle resists have attracted much attention as the next generation resist used for the high-volume production of semiconductor devices because of their high density property. However, the sensitization mechanism of the metal oxide nanoparticle resists is unknown. Understanding the sensitization mechanism is important for the efficient development of resist materials. In the previous study[1], the numbers of electron-hole pairs required for the solubility change of the resist films were estimated for a zirconia nanoparticle and a ligand shell, respectively. In this study, the pattern formation mechanism of zirconia nanoparticle resist was investigated. The elementary reactions possibly induced in the zirconia nanoparticle resist were investigated using a pulse radiolysis method. The pulse radiolysis is a powerful method to directly observe the kinetics of short-lived intermediates produced by an ionizing radiation. The pattern formation mechanism was assumed by integrating the elementary reactions. The resist patterns fabricated using an EUV exposure tool were analyzed on the basis of the assumed pattern formation mechanism. In the material design of metal oxide nanoparticle resists, it is important to efficiently use the electron-hole pairs generated in nanoparticles for the chemical change of ligand molecules. Acknowledgement This work was partially supported by Ministry of Economy, Trade and Industry (METI) and the New Energy and Industrial Technology Development Organization (NEDO). Reference [1] T. Kozawa, J. J. Santillan, and T. Itani, “Electron–hole pairs generated in ZrO2 nanoparticle resist upon exposure to extreme ultraviolet radiation”, Jpn. J. Appl. Phys. 57, 026501 (2018).

Proceedings Article | 19 March 2018 Presentation

Sensitization and reaction mechanisms of ZrO2 nanoparticle resist used for extreme-ultraviolet lithography (Conference Presentation)

Takahiro Kozawa, Satoshi Ishihara, Hiroki Yamamoto, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 10583, 105831O (2018) https://doi.org/10.1117/12.2297654

KEYWORDS: Nanoparticles, Zirconium dioxide, Extreme ultraviolet lithography, Metals, Oxides, Chemically amplified resists, Line edge roughness, Diffusion, Polymers, Stochastic processes

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Proceedings Article | 13 March 2018 Paper

Investigations on EUVL metal resist dissolution behavior using in situ high-speed atomic force microscopy

Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 10586, 105860F (2018) https://doi.org/10.1117/12.2294585

KEYWORDS: Metals, Extreme ultraviolet lithography, Atomic force microscopy, Photoresist processing, Analytical research, Extreme ultraviolet, Line width roughness

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Proceedings Article | 13 March 2018 Paper

Characterization of metal resist for EUV lithography using Infrared free electron laser

Minoru Toriumi, Takayasu Kawasaki, Takayuki Imai, Koichi Tsukiyama, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 10586, 105860E (2018) https://doi.org/10.1117/12.2297156

KEYWORDS: Metals, Extreme ultraviolet lithography, Infrared radiation, Infrared lasers, Extreme ultraviolet, Photoresist developing, Lithography, Free electron lasers, Scientific research, Photoresist processing

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Proceedings Article | 5 April 2017 Presentation + Paper

An investigation on "nano-swelling" phenomenon during resist dissolution using in situ high-speed atomic force microscopy

Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 10146, 101460C (2017) https://doi.org/10.1117/12.2257835

KEYWORDS: Extreme ultraviolet, Photoresist processing, Chemical analysis, Atomic force microscopy, Polymers, Atomic force microscope, Chemically amplified resists, Extreme ultraviolet lithography, Optical lithography, Visualization

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Proceedings Article | 31 March 2016 Paper

Quantification of the resist dissolution process: an in situ analysis using high speed atomic force microscopy

Julius Joseph Santillan, Motoharu Shichiri, Toshiro Itani

Proceedings Volume 9779, 97790D (2016) https://doi.org/10.1117/12.2219078

KEYWORDS: Photoresist processing, Polymers, Particles, Optical lithography, Image processing, Atomic force microscopy, Extreme ultraviolet, Polymer thin films, Data conversion, Atomic force microscope

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Proceedings Article | 25 March 2016 Paper

Study on stochastic phenomena induced in chemically amplified poly(4-hydroxystyrene-co-t-butyl methacrylate) resist (high performance model resist for extreme ultraviolet lithography)

Takahiro Kozawa, Julius Santillan, Toshiro Itani

Proceedings Volume 9779, 97790E (2016) https://doi.org/10.1117/12.2218839

KEYWORDS: Stochastic processes, Extreme ultraviolet lithography, Extreme ultraviolet, Line edge roughness, Chemically amplified resists, Lithography, Semiconductors, Photoresist processing, Bridges, Optical lithography, Molecules, Polymers, Scanning electron microscopy, Chemical analysis, Monte Carlo methods

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Proceedings Article | 20 March 2015 Paper

The effect of resist dissolution process on pattern formation variability: an in situ analysis using high-speed atomic force microscopy

Julius Joseph Santillan, Motoharu Shichiri, Toshiro Itani

Proceedings Volume 9425, 942506 (2015) https://doi.org/10.1117/12.2085746

KEYWORDS: Line edge roughness, Photoresist processing, Extreme ultraviolet lithography, Lithography, Bridges, Atomic force microscopy, Visualization, Biological research, Polymers, 3D image processing

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Proceedings Article | 13 March 2015 Paper

Relationship between information and energy carried by extreme-ultraviolet photons: consideration from the viewpoint of sensitivity enhancement

Takahiro Kozawa, Shinya Fujii, Julius Santillan, Toshiro Itani

Proceedings Volume 9422, 942206 (2015) https://doi.org/10.1117/12.2085619

KEYWORDS: Photons, Line edge roughness, Quantum efficiency, Molecules, Extreme ultraviolet, Extreme ultraviolet lithography, Lithography, Monte Carlo methods, Stochastic processes, Chemically amplified resists

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Proceedings Article | 17 April 2014 Paper

Stochastic effects in fabrication of 11nm line-and-space patterns using extreme ultraviolet lithography

Takahiro Kozawa, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 9048, 904806 (2014) https://doi.org/10.1117/12.2046225

KEYWORDS: Stochastic processes, Line edge roughness, Polymers, Molecules, Extreme ultraviolet, Extreme ultraviolet lithography, Quantum efficiency, Bridges, Photons, Lithography

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Proceedings Article | 27 March 2014 Paper

An in situ analysis of resist dissolution in alkali-based and organic solvent-based developers using high speed atomic force microscopy

Julius Joseph Santillan, Motoharu Shichiri, Toshiro Itani

Proceedings Volume 9051, 90510O (2014) https://doi.org/10.1117/12.2045886

KEYWORDS: Medium wave, Image analysis, Lithography, Line width roughness, Photoresist processing, Extreme ultraviolet lithography, Analytical research, Atomic force microscopy, Polymers, Optical lithography

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Proceedings Article | 1 April 2013 Paper

Relationship between stochastic effect and resist pattern defect in extreme ultraviolet lithography

Takahiro Kozawa, Julius Santillan, Toshiro Itani

Proceedings Volume 8679, 867913 (2013) https://doi.org/10.1117/12.2011240

KEYWORDS: Stochastic processes, Extreme ultraviolet lithography, Polymers, Extreme ultraviolet, Bridges, Molecules, Scanning electron microscopy, Line edge roughness, Monte Carlo methods, Diffusion

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Proceedings Article | 29 March 2013 Paper

In situ dissolution analysis of half-pitch line and space patterns at various resist platforms using high speed atomic force microscopy

Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 8682, 86820I (2013) https://doi.org/10.1117/12.2011373

KEYWORDS: 3D modeling, Image analysis, Standards development, 3D image processing, Atomic force microscopy, Photoresist processing, Polymers, Chemical analysis, Analytical research, Semiconducting wafers

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Proceedings Article | 21 March 2012 Paper

Modeling and simulation of acid diffusion in chemically amplified resists with polymer-bound acid generator

Takahiro Kozawa, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 8322, 832206 (2012) https://doi.org/10.1117/12.916293

KEYWORDS: Diffusion, Chemically amplified resists, Polymers, Line edge roughness, Extreme ultraviolet, Chemical analysis, Monte Carlo methods, Extreme ultraviolet lithography, Line width roughness, Photons

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Proceedings Article | 20 March 2012 Paper

EUV resist processing with flash-lamp

Julius Joseph Santillan, Koji Kaneyama, Akihiko Morita, Kazuhiko Fuse, Hiroki Kiyama, Masaya Asai, Toshiro Itani

Proceedings Volume 8325, 832513 (2012) https://doi.org/10.1117/12.916342

KEYWORDS: Line width roughness, Photoresist processing, Extreme ultraviolet, Lithography, Critical dimension metrology, Extreme ultraviolet lithography, Semiconducting wafers, Lamps, Xenon, Scanning electron microscopy

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Proceedings Article | 19 March 2012 Paper

An in situ analysis of the resist pattern formation process

Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 8325, 83250P (2012) https://doi.org/10.1117/12.916343

KEYWORDS: Photoresist processing, Critical dimension metrology, Extreme ultraviolet, Statistical analysis, Analytical research, 3D image processing, Extreme ultraviolet lithography, Image processing, Lithography, Semiconducting wafers

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Proceedings Article | 16 April 2011 Paper

In situ dissolution analysis of EUV resists

Toshiro Itani, Julius Joseph Santillan

Proceedings Volume 7972, 79720H (2011) https://doi.org/10.1117/12.878670

KEYWORDS: Photoresist processing, Extreme ultraviolet, Polymers, Atomic force microscopy, Semiconducting wafers, Polymer thin films, Lithography, Analytical research, Visualization, Liquids

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Proceedings Article | 16 April 2011 Paper

Performance of EUV molecular resists based on fullerene derivatives

Hiroaki Oizumi, Kentaro Matsunaga, Koji Kaneyama, Julius Joseph Santillan, Gousuke Shiraishi, Toshiro Itani

Proceedings Volume 7972, 797209 (2011) https://doi.org/10.1117/12.879302

KEYWORDS: Fullerenes, Line width roughness, Extreme ultraviolet lithography, Extreme ultraviolet, Lithography, Photoresist processing, Semiconducting wafers, Semiconductors, Etching, Scanning electron microscopy

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Proceedings Article | 16 April 2011 Paper

High-sensitivity EUV resists based on fluorinated polymers

Tsuneo Yamashita, Masamichi Morita, Yoshito Tanaka, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 7972, 79721G (2011) https://doi.org/10.1117/12.879568

KEYWORDS: Extreme ultraviolet, Polymers, Line width roughness, Lithography, Extreme ultraviolet lithography, Absorption, Fluorine, Materials processing, Chemical species, Deep ultraviolet

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Proceedings Article | 8 April 2011 Paper

Relationships between EUV resist outgassing and contamination deposition at Selete

Hiroaki Oizumi, Kazuyuki Matsumaro, Satoshi Nomura, Julius Joseph Santillan, Toshiro Itani, Takeo Watanabe, Naohiro Matsuda, Tetsuo Harada, Hiroo Kinoshita

Proceedings Volume 7969, 796921 (2011) https://doi.org/10.1117/12.878571

KEYWORDS: Contamination, Extreme ultraviolet, Extreme ultraviolet lithography, Mirrors, Spectroscopy, Photography, Statistical analysis, Protactinium, Optical components, Line width roughness

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Proceedings Article | 25 March 2011 Paper

Development status of EUV resist materials and processing at Selete

Kentaro Matsunaga, Gousuke Shiraishi, Julius Joseph Santillian, Koji Kaneyama, Hiroaki Oizumi, Toshiro Itani

Proceedings Volume 7969, 796905 (2011) https://doi.org/10.1117/12.878432

KEYWORDS: Lithography, Line width roughness, Photoresist processing, Extreme ultraviolet, Extreme ultraviolet lithography, Polymers, Etching, Semiconductors, Manufacturing, Scanning electron microscopy

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Proceedings Article | 26 March 2010 Paper

Development of EUV resists based on various new materials

Hiroaki Oizumi, Kazuyuki Matsumaro, Julius Santillan, Gousuke Shiraishi, Koji Kaneyama, Kentaro Matsunaga, Toshiro Itani

Proceedings Volume 7639, 76390R (2010) https://doi.org/10.1117/12.846429

KEYWORDS: Fullerenes, Extreme ultraviolet lithography, Line width roughness, Extreme ultraviolet, Lithography, Semiconductors, Manufacturing, Photoresist processing, Scanning electron microscopy, Etching

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Proceedings Article | 23 March 2010 Paper

Alternative resist processes for LWR reduction in EUVL

Koji Kaneyama, Kentaro Matsunaga, Gousuke Shiraishi, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 7636, 763633 (2010) https://doi.org/10.1117/12.846073

KEYWORDS: Line width roughness, Photoresist processing, Scanning electron microscopy, Extreme ultraviolet lithography, Extreme ultraviolet, Protactinium, Semiconducting wafers, Lithography, Standards development, Cooling systems

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Proceedings Article | 23 March 2010 Paper

Evaluations of EUV resist outgassing by gas chromatography mass spectrometry (GC-MS)

Hiroaki Oizumi, Kazuyuki Matsumaro, Julius Santillan, Toshiro Itani

Proceedings Volume 7636, 76362W (2010) https://doi.org/10.1117/12.846269

KEYWORDS: Extreme ultraviolet, Mass spectrometry, Calibration, Chromatography, Extreme ultraviolet lithography, Ions, Ionization, Chemical analysis, Semiconducting wafers, Molecules

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Proceedings Article | 20 March 2010 Paper

Development of resist material and process for hp-2x-nm devices using EUV lithography

Kentaro Matsunaga, Hiroaki Oizumi, Koji Kaneyama, Gousuke Shiraishi, Kazuyuki Matsumaro, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 7636, 76360S (2010) https://doi.org/10.1117/12.846088

KEYWORDS: Extreme ultraviolet lithography, Lithography, Photoresist processing, Line width roughness, Extreme ultraviolet, Manufacturing, Materials processing, Semiconductors, Analytical research, Semiconducting wafers

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Proceedings Article | 1 April 2009 Paper

EUV resist outgassing quantification and application

Shinji Kobayashi, Julius Joseph Santillan, Hiroaki Oizumi, Toshiro Itani

Proceedings Volume 7273, 72731P (2009) https://doi.org/10.1117/12.813362

KEYWORDS: Molecules, Extreme ultraviolet, Extreme ultraviolet lithography, Ions, Protactinium, Contamination, Semiconducting wafers, Mirrors, Quality measurement, Chemical analysis

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Proceedings Article | 15 April 2008 Paper

Quantitative analysis of EUV resist outgassing

Shinji Kobayashi, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 6923, 692345 (2008) https://doi.org/10.1117/12.771828

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Molecules, Semiconducting wafers, Xenon, Analytical research, Protactinium, Mirrors, EUV optics, Wafer-level optics

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Proceedings Article | 4 April 2008 Paper

EUV resist outgassing analysis in Selete

Julius Joseph Santillan, Shinji Kobayashi, Toshiro Itani

Proceedings Volume 6923, 692342 (2008) https://doi.org/10.1117/12.771779

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Carbon dioxide, Ions, Molecules, Protactinium, Analytical research, Statistical analysis, Mass spectrometry, Line width roughness

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Proceedings Article | 4 April 2008 Paper

EUV resist development in Selete

Daisuke Kawamura, Koji Kaneyama, Shinji Kobayashi, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 6923, 692313 (2008) https://doi.org/10.1117/12.771858

KEYWORDS: Line width roughness, Extreme ultraviolet, Electroluminescence, Scanning electron microscopy, Extreme ultraviolet lithography, Solids, 3D modeling, Diffusion, Photomasks, Lithographic illumination

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Proceedings Article | 26 March 2008 Paper

Base quencher effects in chemically amplified resist at sub-30-nm fabrication

Takahiro Kozawa, Seiichi Tagawa, Julius Joseph Santillan, Minoru Toriumi, Toshiro Itani

Proceedings Volume 6923, 69230P (2008) https://doi.org/10.1117/12.772154

KEYWORDS: Diffusion, Line edge roughness, Image quality, Extreme ultraviolet, Molecules, Chemically amplified resists, Extreme ultraviolet lithography, Photoresist processing, Lithography, Quenching (fluorescence)

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Proceedings Article | 22 March 2007 Paper

A study of EUV resist outgassing characteristics using a novel outgas analysis system

Julius Joseph Santillan, Minoru Toriumi, Toshiro Itani

Proceedings Volume 6519, 651944 (2007) https://doi.org/10.1117/12.711264

KEYWORDS: Extreme ultraviolet, Polymers, Extreme ultraviolet lithography, Semiconducting wafers, Ions, Mass spectrometry, Mirrors, Protactinium, Plasma, Temperature metrology

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Proceedings Article | 21 March 2006 Paper

Novel high refractive index fluids for 193nm immersion lithography

Julius Santillan, Akihiko Otoguro, Toshiro Itani, Kiyoshi Fujii, Akifumi Kagayama, Takashi Nakano, Norio Nakayama, Hiroaki Tamatani, Shin Fukuda

Proceedings Volume 6154, 61544Q (2006) https://doi.org/10.1117/12.656089

KEYWORDS: Photoresist materials, Refractive index, Immersion lithography, Absorption, Neodymium, Microfluidics, Fluid dynamics, Interferometry, Lithography, Water

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Showing 5 of 38 publications

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