In this work we presents effect of ultra high pressure annealing on Si-implanted GaN n-type and p-type epilayers on ammonothermally grown bulk GaN substrates. Samples were blanked implanted with different Si ion fluences from 3x1014 cm-2 to 3x1015 cm-2 and then annealed using UHPA at temperature of 1200, 1300 and 1400°C for 5 minutes at 1 GPa. Ion distribution before and after annealing where investigated using SIMS method showing no Si diffusion in p-type GaN along with Mg diffusion from epilayer and very low Si diffusion in n-type GaN epilayers. X-ray diffraction studies shows that not all defects were recovered after annealing, especially for high ion fluences. Annealing at 1400°C causes changes in implanted GaN morphology. The surface roughness where increased after annealing especially for samples implanted with 3x1015 cm-2Si dose. Our results shows that more work is needed to optimize UHPA parameters for defect recovery in Si-implanted GaN especially for high ion fluences.
The growth process of molybdenum disulfide (MoS2) films on SiO2, Al2O3 and BN substrates is presented. Samples were measured by Raman spectroscopy and Secondary Ion Mass Spectrometry to investigate mechanism of increase lateral dimensions and quality of growth material. Size of obtained layers is crucial for further processing and application into current microelectronic devices. Considering all the substrates used in sulfurization process of molybdenum layers, hexagon Boron Nitride (hBN) is the most promising material. It is the result of its high crystalline quality and lack of oxygen atoms, which diffuse to surface during production process in 750°C and disallow to increase dimensions of MoS2. Described method of sulfurization creates possibility of production of that material on large area substrates and easy integration with other two dimensional compounds like graphene, WS2, SiC, hBN for new types of electronic applications.
The highly Be-doped InAs layer has been grown on semi-insulating GaAs (100) substrate by Molecular Beam Epitaxy. Very good quality of the layer has been attested by high resolution scanning electron microscope (HR-SEM), X-ray diffraction (XRD) and the Raman spectra. The parallel and perpendicular residual strain are determined to be – 1.17 × 10-3 , and 1.12 × 10-3 , respectively. Moreover, the absorbance (ABS) and photoluminescence (PL) spectra were collected in order to estimate the bandgap narrowing. The 10 meV bandgap shrinking for 1.7×1018 cm-3 acceptor concentration suggests necessity of reexamining the Jain et al model [Jain, S. C., et al. - JAP 68(7): 3747-3749] in the context of actual values of InAs valence-bands effective-masses.
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