As scaling in semiconductor devices continues, the aspect ratios of deep trench isolation (DTI) structures have increased. DTI structures are used in power devices, power management ICs and image sensors as a method to isolate active devices by reducing crosstalk, parasitic capacitance, latch-up and allowing for an increase breakdown voltage of active devices. Measurement of these structures in high volume manufacturing (HVM), with non-destructive technology, has mostly been limited to the depth and top width of the DTI structure, while the bottom width (BCD) has not been able to be reliably measured. Here we present two different optical metrologies, “conventional” OCD and IRCD, that operate in the UV-VIS-NIR and MIR region of the electromagnetic spectrum, respectively, and discuss the measurability of DTI sidewall profile, bottom width, and depth in BCD (Bipolar CMOS DMOS) power management IC devices for each method at various pitches and line to space ratios. Experimental data will be presented showing sensitivity and discrimination of IRCD to a DOE specifically on the bottom width for three different structures.
The W-Recess step for 3D NAND replacement gate process currently has no in-line process control solution. W replacement renders the structure opaque in the ultraviolet/visible/near-infrared (UV/VIS/NIR) region beyond just a few tier layers in the most advanced 3D NAND devices. Additionally, increased word line (WL) slit pitch scaling further reduces the already minimal optical signal from the top of the structure. Through finite-difference time-domain (FDTD) and optical critical dimension (OCD) simulations, we show that a specially designed, design rule-compliant (that is, possessing a slit pitch matching the device) ellipsometry target permits mid-IR light to completely penetrate through oxide metal (OM) pairs, enabling measurement of the W-Recess Z-profile. Furthermore, recent experimental data measured on the designed target in >200 pair 3D NAND node prove that mid-IR light has sensitivity to the slit bottom. An OCD model was developed and showed good design of experiment (DOE) discrimination capability and reference correlation.
A novel mid-infrared critical dimension (IRCD) metrology has been developed on a platform suitable for fab production. Compared to traditional optical critical dimension (OCD) technology based on ultraviolet, visible, and near-IR light, the IRCD system exploits unique optical properties of common semiconductor fab materials in the mid-infrared to enable accurate measurements of high-aspect-ratio etched features. In this paper, we will show two examples of critical dry etch steps in 3D NAND channel formation module of an advanced node that require nondestructive process control: (1) channel hole active area etch and (2) amorphous carbon hardmask etch. In the first example, we take advantage of the absorption bands of silicon dioxide and silicon nitride to get accurate CD measurements at different depths, resulting in high-fidelity z-profile metrology of the channel – key to guiding process development and accelerated learning for 3D NAND device manufacturing. In the second example, the most common amorphous carbon hardmask materials for advanced 3D NAND nodes are opaque in the traditional OCD wavelength range; however, in the mid-infrared, there is light penetration and hence spectral sensitivity to dimensional parameters including sub-surface features. We show successful detection of intentional process skews and as well accurate bottom CD measurements of the hardmask.
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