III-V compound semiconductors have abundant features for various electronic, optoelectronic and photonic applications, all arise from variform magic combination of group III and group V elements formed binaries, resulting in ever-changing characteristics. In this paper, diversified ternaries, quaternaries and quinaries are presented geometrically based on the binaries of arsenide, phosphide and antimonide, mainly concerned of their bandgap, lattice constant and the lattice match domain on different substrates. The features of nitride and dilute nitride, bismide and dilute bismuth, as well as boride, are also discussed briefly. An overall observation of whole III-Vs may contribute to the comprehensive understanding of their latent capacity and sustainable development, along with many challenges.
In order to improve the detection sensitivity of single-photon detection infrared imaging camera image sensor, the study is based on the structure of InGaAs infrared focal plane detector array. By using ZEMAX software, the size and position changes of the imaging light spot of the micro-lens array in the case of incident at different field of view angles are compared and analyzed, and the structural parameters are optimized. A 64×64 Si refracted micro-lens array is designed and manufactured. The study established a microoptical measuring system for micro-lens arrays, including light source, optical fiber, collimation, imaging and measuring devices. The measuring method and process of the parameters are introduced briefly. The morphology, geometric structure parameters and focal length of the micro-lens can be measured, therefore, the micro-lens can be evaluated effectively. The results show that the micro-lens array has good surface profile, good geometric uniformity and good optical properties.
Highly uniform ball-shaped indium bump arrays with small pixel pitches down to 10 μm have been fabricated. Multilayer stacked metal contact electrodes covered by a thin SiNx dielectric layer serve as the under bump metallization. Indium bumps were thermally evaporated inside the SiNx openings on top of the electrodes. Wet lift-off of the indium bumps was achieved by using a negative photoresist with precisely controlled undercuts. By comparison to a recipe without the SiNx, the non-uniform reflow effect of the indium materials was effectively eliminated after the thermal treatment. A mean indium ball diameter of 6.05 μm with a small coefficient of variation of 2.6% was finally realized for 10 μm pitch arrays. These results demonstrate the fabrication method is promising to ensure a reliable flip-chip hybridization of ultra-fine pitch focal plane arrays to silicon readout circuits with high yield.
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