Paper
6 May 2005 BEOL process technology based on proximity electron lithography: demonstration of the via-chain yield comparable with ArF lithography
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Abstract
Proximity electron lithography (PEL) using the ultra-thin tri-layer resist system has been successfully integrated in our dual-damascene Cu/low-k interconnects technology for the 90-nm node. Critical comparison between conventional ArF lithography and PEL as to the via-chain yield for test element groups (TEGs) including approximately 2.9 million via chains was performed to demonstrate its production feasibility.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Nohdo, S. Omori, K. Iwase, M. Yoshizawa, T. Motohashi, K. Oguni, K. Nakayama, H. Egawa, T. Takeda, T. Morikawa, S. Nohama, H. Nakano, T. Kitagawa, S. Moriya, and H. Kawahira "BEOL process technology based on proximity electron lithography: demonstration of the via-chain yield comparable with ArF lithography", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); https://doi.org/10.1117/12.601733
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Cited by 3 scholarly publications.
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KEYWORDS
Photomasks

Lithography

Resistance

Semiconducting wafers

Inspection

Charged-particle lithography

Photoresist processing

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