Silicon photomultiplier (SiPM) is a kind of array solid state photodetector which uses avalanche multiplication mechanism to detect weak light. It has very high detection sensitivity and is an excellent solution to the problem of weak light detection. Due to the thin thickness of the doped layer with high concentration impurity atoms on the surface of the existing SiPMs with bulk resistor quenching mode, the voltage of G-APD at different positions is not uniform. To solve this problem, SiPM with surface metal mesh structure is proposed in this paper, and the process and device simulation are carried out by Silvaco simulation software. The structure can improve the photon number resolution of SiPM by filling metal mesh holes on the surface of SiPM high concentration ion doping layer, so that the two ends of the G-APD cells in different regions have consistent bias. The process simulation results show that the growing oxide layer before ion implantation will affect the breakdown voltage of SiPM, and the breakdown voltage will increase with the increase of oxide layer thickness. The device simulation results show that the mesh structure improves the uniformity of electric field distribution among adjacent G-APD cells. In addition, the incident light can form multiple reflections between the metal mesh structure and the packaging medium, and a part of the light in the non-photosensitive region will be refracted into the photosensitive region. The simulated light response results show that the peak photocurrent is increased by 5% at room temperature when the over-voltage is 2.5 V.
Microlens array has important applications in array photodetector, display, optical imaging, optical communication and other fields. Aiming at the problems of high production cost, difficult production, tedious coupling alignment steps and difficult to adapt to mass production in the current manufacturing method of microlens array, a method of self-forming microlens array based on the combined action of surface tension and gravity of liquid transparent material is proposed, and the feasibility of whether the method can form microlens array is studied. The theoretical analysis results show that the self-forming microlens array can be formed by the interaction between the surface tension and gravity of the liquid encapsulation medium. The experimental results show that a microlens array with good consistency is formed in the metal mesh array with apertures of 1 mm and 80 μm, which has obvious convergence effect on light.
In this study, by designing high-speed transimpedance amplification circuit and developing photon counting program in the Labview platform, we investigate the variation curve of the area integral (essentially the charge) of the output waveform of Silicon photomultiplier (SiPM) versus the incident light flux (the number of photons irradiated to the surface of SiPM per unit of time). The maximum photon counting rate of 1.56 Gcps was obtained at 470 nm at room temperature. When the light intensity increases to a certain extent, due to the saturation of the SiPM, the photon counting rate did not increase with the increase of the light intensity anymore. In addition, by recording the incident photon number of the calibrated photodiode, we also plot the photon detection effieciency (PDE) curve versus the incident light wavelength under different light intensities. The PDE curves were in accordance with the ones in the datasheet of the SiPM when the light intensity is much smaller than the saturation light intensity for the SiPM.
Multi-pixel photon counters (MPPCs) have attracted much attention in low-light detection, andhave been widely used in lidar, high-energy particle physics, nuclear physics, astrophysics, nuclear medicine imaging and spectroscopy. Accurate measuring of MPPC key parameters is the prerequisite for judging its performance level. In this paper, the measuring methods of key parameters of MPPCare studied comprehensively, and relatively simple measuring methods are proposed, mainly including the measuring methods of pulse waveform characteristics, Dark Counting Rate (DCR), Photon DetectionEfficiency (PDE), photon number-resolved spectrum, optical crosstalk probability, gain and reverse volt-ampere characteristics of MPPC. A test measuring system is built. The parameters of typical MPPC devices are measured experimentally. The test results are reasonable, and the measured values of various parameters are basically consistent with the nominal values in the MPPCdevice specification.
Multi-pixel photon counter (MPPC) has been widely used in the field of weak light detection due to their various advantages in recent years. However, their parasitic effects such as optical crosstalk limit their further improvement in photoelectric performance. A deep understanding of the generation and propagation mechanism of optical crosstalk in MPPC is one of the prerequisites for further improving the performance of MPPC. The mechanism of the non-uniform spatial distribution phenomenon of the prompt optical crosstalk effect (POCE) in MPPC was investigated in-depth. The experimental results show that the optical crosstalk probability (Pct) in MPPC without optical isolation trench shows obviously non-uniformity within the avalanche photo diode (APD) cell, nevertheless, for the MPPC with optical isolation trench, the uniformity of spatial distribution of Pct in APD cells is greatly improved. Therefore, the different propagation distances of crosstalk photons emitted from different positions of the source APD cell to the nearest neighbor APD cell along a straight line, are the main reason of non-uniform spatial distribution of Pct in MPPC. According to the experimental results, it can also be inferred that the emission of crosstalk photons is spatially localized during an avalanche of an APD cell, and most of the crosstalk photons are emitted during the early stage of the avalanche. The results of this paper not only have reference value for further understanding the mechanism of optical crosstalk effect in MPPC, but also be beneficial for guiding to optimize the structure and process design of MPPC, and thus improving the performance of MPPC.
Raman spectrometry was employed to study the characteristics of Raman spectra of polyethylene terephthalate (PET), which were treated with sodium hydroxide, sulfuric acid and copper sulfate, respectively. Raman spectra under different conditions were obtained and the characteristics of the Raman spectra were analyzed. The morphology structures were observed under different conditions using Atomic Force Microscope. The results show that the spectral intensity of PET treated with sodium hydroxide is higher than that untreated between 200-1750 cm-1, while the intensity of PET treated with sodium hydroxide is lower than that untreated beyond 1750 cm-1 and the fluorescence background of Raman spectra is decreased. The spectral intensity of PET treated with sulfuric acid is remarkably reduced than that untreated, and the intensity of PET treated with copper sulphate is much higher than that untreated.
In this work it is shown the benefit of using waveform integration of the avalanche pulses of MPPC for enhancing the photon number resolving capability of Multi-Pixel Photon Counter (MPPC). Up to 47 photon equivalent peaks can be distinguished in the Photon-Number-Resolving (PNR) spectrum with a repetition frequency of 80 MHz, which is the largest reported number obtained at room temperature as far as we know.
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