Mr. Qingwei Liu Profile

Qingwei Liu

at Semiconductor Manufacturing International Corp

SPIE Involvement:

Author

Publications (31)

Proceedings Article | 13 June 2022 Poster

Poster

Use of optical AEI metrology to compute overlay and etch-induced tilt in logic

Song Bai, Qingwei Liu, Xiaosong Yang, Yuntao Jiang, Gaoying Zhang, Yunhang Qiu, Alok Verma, Bert Verstraeten, Chaoyu Chen, Dennis Loeffen, Elton Bitinka, Giulia Argento, Martijn Jongen, Pavel Izikson, Huanian You, Perry Bao, Yvon Chai, Zhi-Yi Gao

Proceedings Volume 12053, 120531F (2022) https://doi.org/10.1117/12.2615979

KEYWORDS: Signal detection, Overlay metrology, Metrology, Logic, Scanning electron microscopy, Etching, Yield improvement, Optical metrology, Inspection, Front end of line

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In advanced logic nodes, edge placement error (EPE) budget becomes tighter. Such budget needs to account for items that were nearly negligible before FinFET era, such as rule-based etch bias error or overlay metrology to device (MTD) bias. Some of the new challenges are overlay metrology error due to process induced mark asymmetry, after Etch Inspection (AEI) pattern shift and aberration induced overlay difference between mark and device, all summarized as Metrology to Device bias. YieldStar In-Device Metrology (YS IDM) addresses device-like metrology and real AEI overlay, but in principle might suffer from process asymmetry. In this work we measure ASML Self Reference (ASR) targets by IDM. We use the detected IDM signal to quantify and address for the first time the asymmetry of the printed marks containing device-like structures on FEOL with respect to reference tool. Two main findings characterize this work: - IDM has the capability to identify overlay and tilt signal from a multi-wavelength signal. Scanning electron microscopy (SEM) is a different metrology tool which, to our best knowledge, is instead detecting the two signals as one, without separating them. Overlay and tilt signals identified by IDM can be combined in order to match to SEM - The relative amount of overlay and tilt carried by the IDM signal shows a monotonic and continuous wavelength dependency. These findings increase the understanding of the delta IDM to SEM method, improving the matching between the two. The separation of overly and tilt allows to distinguish which part of the process is causing a certain fingerprint, as tilt is purely driven by non-litho processes. In addition, the combination of overlay and tilt metrology allows improved correlation of the detected AEI signal to yield, and the definition of KPIs for smaller MTD fingerprint. Finally, IDM provides the possibility to keep throughput benefits of optical metrology while overcoming the robustness challenges

Proceedings Article | 24 March 2017 Paper

Paper

Lithography and OPC friendly triple patterning decomposition method for VIA

Guanyong Yan, Liang Li, Xiao Chen, Qingwei Liu, Yuanying Tu

Proceedings Volume 10147, 101471J (2017) https://doi.org/10.1117/12.2257922

KEYWORDS: Optical lithography, Photomasks, Lithography, Optical proximity correction, Immersion lithography, Manufacturing, Etching, Visualization, Image processing, Process control, Metals, Semiconducting wafers

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Proceedings Article | 16 March 2016 Paper

Paper

Migrating from older to newer technology nodes and discovering the process weak-points

Linda Zhuang, Jenny Pang, Jessy Xu, MengFeng Tsai, Xue Long Shi, Qing Wei Liu, Ellyn Yang, Yifan Zhang, Jason Sweis, Ya-Chieh Lai, Hua Ding

Proceedings Volume 9781, 97810L (2016) https://doi.org/10.1117/12.2219561

KEYWORDS: New and emerging technologies, Design for manufacturability, Manufacturing, Acquisition tracking and pointing, Structural design, Profiling, Databases, Electronic design automation, Very large scale integration, Image classification, Optical proximity correction

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Proceedings Article | 15 March 2016 Paper

Paper

A novel full chip process window OPC based on matrix retargeting

Xima Zhang, Zhitang Yu, Qingwei Liu, Xuan Shen, Liguo Zhang, Le Hong, Vlad Liubich, George Lippincott, Cynthia Zhu, James Word

Proceedings Volume 9780, 97801C (2016) https://doi.org/10.1117/12.2219913

KEYWORDS: Computer programming, Optical proximity correction, Resolution enhancement technologies, Metals, Computational lithography, Model-based design, Photomasks, Optical lithography, Lithography, Semiconducting wafers, Data modeling, Visualization

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Proceedings Article | 18 March 2015 Paper

Paper

RET selection on state-of-the-art NAND flash

Neal Lafferty, Yuan He, Jinhua Pei, Feng Shao, QingWei Liu, Xuelong Shi

Proceedings Volume 9426, 94260L (2015) https://doi.org/10.1117/12.2087176

KEYWORDS: Source mask optimization, Resolution enhancement technologies, Photomasks, Lithography, Optical proximity correction, Nanoimprint lithography, SRAF, Optical lithography, Photovoltaics, Visualization

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Proceedings Article | 12 April 2013 Paper

Paper

Compatibility of optimized source over design changes in the foundry environment

Jojo Pei, Feng Shao, Omar ElSewefy, Cynthia Zhu, Verne Xu, Yu Zhu, Liguo Zhang, Xuelong Shi, Qingwei Liu, Aasutosh Dave

Proceedings Volume 8683, 86831M (2013) https://doi.org/10.1117/12.2013704

KEYWORDS: Source mask optimization, Resolution enhancement technologies, Neodymium, Optical proximity correction, Photomasks, Ions, Molybdenum, Laser induced plasma spectroscopy, Logic, Calibration

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Proceedings Article | 25 September 2010 Paper

Paper

Optimize the OPC control recipe with cost function

Qingwei Liu, Liguo Zhang

Proceedings Volume 7823, 78233M (2010) https://doi.org/10.1117/12.863602

KEYWORDS: Optical proximity correction, Resolution enhancement technologies, Visualization, Lithography, Control systems, Semiconductor manufacturing, Roads, Semiconductors, Lithographic illumination, Immersion lithography

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Proceedings Article | 4 March 2010 Paper

Paper

Study of model based etch bias retarget for OPC

Qingwei Liu, Renqiang Cheng, Liguo Zhang

Proceedings Volume 7640, 76402T (2010) https://doi.org/10.1117/12.845962

KEYWORDS: Etching, Optical proximity correction, Critical dimension metrology, Model-based design, Mathematical modeling, 3D modeling, Lithography, Photomasks, Semiconducting wafers, Data modeling

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Proceedings Article | 23 September 2009 Paper

Paper

Adaptive OPC approach based on image simulation

Qingwei Liu, Liguo Zhang

Proceedings Volume 7488, 748835 (2009) https://doi.org/10.1117/12.829393

KEYWORDS: Optical proximity correction, SRAF, Photomasks, Printing, Databases, Resolution enhancement technologies, Manufacturing, Mask making, Computer simulations, Optics manufacturing

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Proceedings Article | 11 May 2009 Paper

Paper

Mask and wafer evaluation of Sigma7500 pattern generator applied to 65nm logic metal and via layers

Frank Liu, Irene Shi, Qingwei Liu, Likeit Zhu, Shirley Zhao, Eric Guo

Proceedings Volume 7379, 737919 (2009) https://doi.org/10.1117/12.824286

KEYWORDS: Photomasks, Optical proximity correction, Semiconducting wafers, Binary data, Vestigial sideband modulation, Critical dimension metrology, Logic, Metals, Deep ultraviolet, Lithography

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Proceedings Article | 16 March 2009 Paper

Paper

Transformation procedure from sparse OPC model to grid-based model

Qingwei Liu, Liguo Zhang

Proceedings Volume 7274, 727425 (2009) https://doi.org/10.1117/12.812961

KEYWORDS: Optical proximity correction, Data modeling, Calibration, Semiconducting wafers, Optical lithography, Lithography, Optical calibration, Critical dimension metrology, Process modeling, Printing

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Proceedings Article | 4 December 2008 Paper

Paper

Considering mask pellicle effect for more accurate OPC model at 45nm technology node

Ching-Heng Wang, Qingwei Liu, Liguo Zhang

Proceedings Volume 7140, 71403R (2008) https://doi.org/10.1117/12.805238

KEYWORDS: Pellicles, Photomasks, Optical proximity correction, Critical dimension metrology, Lithography, Semiconducting wafers, Resolution enhancement technologies, Optical lithography, Image acquisition, Glasses

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Proceedings Article | 17 October 2008 Paper

Paper

Accelerate OPC convergence with new iteration control methodology

Ching-Heng Wang, Qingwei Liu, Liguo Zhang

Proceedings Volume 7122, 712240 (2008) https://doi.org/10.1117/12.800598

KEYWORDS: Optical proximity correction, Distortion, Image processing, Resolution enhancement technologies, Optical lithography, Tolerancing, Control systems, Optical calibration, Feedback control, Semiconductor manufacturing

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Proceedings Article | 1 April 2008 Paper

Paper

Pattern centric OPC flow: a special RET flow with fast turn-around-time

Tom Wang, Joanne Wu, Qingwei Liu, Gary Zhang, Benny Wang, Bo Su, Guojie Cheng

Proceedings Volume 6924, 69243V (2008) https://doi.org/10.1117/12.771617

KEYWORDS: Optical proximity correction, Model-based design, Resolution enhancement technologies, Optical lithography, Process modeling, Design for manufacturing, Performance modeling, Photomasks, Databases, Environmental sensing

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Proceedings Article | 7 March 2008 Paper

Paper

Optimized OPC approach for process window improvement

Ching-Heng Wang, Qingwei Liu, Liguo Zhang

Proceedings Volume 6924, 69243E (2008) https://doi.org/10.1117/12.758640

KEYWORDS: Optical proximity correction, Critical dimension metrology, Resolution enhancement technologies, Design for manufacturability, Manufacturing, Silicon, Transistors, Visualization, Yield improvement, Process modeling

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Proceedings Article | 31 October 2007 Paper

Paper

More robust model built using SEM calibration

Ching-Heng Wang, Qingwei Liu, Liguo Zhang

Proceedings Volume 6730, 673053 (2007) https://doi.org/10.1117/12.740411

KEYWORDS: Scanning electron microscopy, Calibration, Optical proximity correction, Data modeling, Semiconducting wafers, Critical dimension metrology, Mathematical modeling, Visualization, Electron microscopes, Structural design

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Proceedings Article | 31 October 2007 Paper

Paper

An approach of auto-fix post OPC hot spots

Ching-Heng Wang, Qingwei Liu, Liguo Zhang

Proceedings Volume 6730, 67304Z (2007) https://doi.org/10.1117/12.740406

KEYWORDS: Optical proximity correction, Databases, Photomasks, Resolution enhancement technologies, Bridges, Mask making, Critical dimension metrology, Semiconductor manufacturing, Visualization, Roads

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Proceedings Article | 27 March 2007 Paper

Paper

Taking image quality factor into the OPC model tuning flow

Ching-Heng Wang, Qingwei Liu, Liguo Zhang

Proceedings Volume 6520, 65203R (2007) https://doi.org/10.1117/12.710545

KEYWORDS: Data modeling, Optical proximity correction, Process modeling, Nanoimprint lithography, Semiconducting wafers, Performance modeling, Image processing, Image quality, Data processing, Optical lithography

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Proceedings Article | 20 October 2006 Paper

Paper

No-forbidden-pitch SRAF rules for advanced contact lithography

Ching-Heng Wang, Qingwei Liu, Liguo Zhang, Chi-Yuan Hung

Proceedings Volume 6349, 63494K (2006) https://doi.org/10.1117/12.685071

KEYWORDS: SRAF, Optical proximity correction, Lithography, Photomasks, Databases, Resolution enhancement technologies, Scanners, Image enhancement, Printing, Image quality

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Proceedings Article | 20 October 2006 Paper

Paper

Illumination optimization for 65nm technology node

Ching-Heng Wang, Qingwei Liu, Liguo Zhang, Chi-Yuan Hung

Proceedings Volume 6349, 63494V (2006) https://doi.org/10.1117/12.685077

KEYWORDS: Optical proximity correction, Process modeling, Semiconducting wafers, Lithographic illumination, Optical lithography, Resolution enhancement technologies, Lithography, Data modeling, Calibration, Manufacturing

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Proceedings Article | 20 May 2006 Paper

Paper

Model based SRAF insertion check with OPC verify tools

Chi-Yuan Hung, Zexi Deng, Gensheng Gao, Liguo Zhang, Qingwei Liu

Proceedings Volume 6283, 628332 (2006) https://doi.org/10.1117/12.681820

KEYWORDS: SRAF, Optical proximity correction, Resolution enhancement technologies, Lithography, Semiconducting wafers, Printing, Data modeling, Process modeling, Manufacturing, Optical lithography

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Proceedings Article | 20 May 2006 Paper

Paper

Model-based insertion of assist features using pixel inversion method: implementation in 65 nm node

Chi-Yuan Hung, Qingwei Liu, Kyohei Sakajiri, Shumay Shang, Yuri Granik

Proceedings Volume 6283, 62832Y (2006) https://doi.org/10.1117/12.681816

KEYWORDS: SRAF, Photomasks, Model-based design, Optical proximity correction, Metals, Lithography, Semiconducting wafers, Logic, Mask making, Inspection

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Proceedings Article | 20 May 2006 Paper

Paper

A methodology to weight OPC modeling data points

Chi-Yuan Hung, Ching-Heng Wang, Qingwei Liu, Cliff Ma, KeChih Wu, Gary Zhang

Proceedings Volume 6283, 628331 (2006) https://doi.org/10.1117/12.681819

KEYWORDS: Data modeling, Optical proximity correction, Semiconducting wafers, Silicon, Critical dimension metrology, Process modeling, Performance modeling, Optical lithography, Mathematical modeling, Calibration

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Proceedings Article | 20 March 2006 Paper

Paper

A methodology to take LER effect into OPC modeling algorithm

Chi-Yuan Hung, Qingwei Liu, Zexi Deng, Liguo Zhang

Proceedings Volume 6154, 615439 (2006) https://doi.org/10.1117/12.651552

KEYWORDS: Line edge roughness, Data modeling, Optical proximity correction, Process modeling, Semiconducting wafers, Data processing, Physics, Optical lithography, Photomasks, Model-based design

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Proceedings Article | 20 March 2006 Paper

Paper

A novel approach for full-chip SRAF printability check

Chi-Yuan Hung, Liguo Zhang, Qingwei Liu

Proceedings Volume 6154, 615438 (2006) https://doi.org/10.1117/12.654113

KEYWORDS: SRAF, Wafer-level optics, Lithography, Semiconducting wafers, Resolution enhancement technologies, Optical proximity correction, Process modeling, Data modeling, Optical lithography, Manufacturing

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Proceedings Article | 9 November 2005 Paper

Paper

Simulation-based scattering bar generation for 65nm and beyond

Chi-Yuan Hung, Qingwei Liu, Liguo Zhang

Proceedings Volume 5992, 599252 (2005) https://doi.org/10.1117/12.629798

KEYWORDS: SRAF, Optical proximity correction, Scattering, Process modeling, Calibration, Lithography, Resolution enhancement technologies, Data modeling, Optimization (mathematics), Photomasks

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Proceedings Article | 9 November 2005 Paper

Paper

Integrated post tape outflow for fast design to mask turn-around time

Chi-Yuan Hung, Qingwei Liu, Liguo Zhang, Shumay Shang, George Bailey, Andrew Jost, Travis Brist

Proceedings Volume 5992, 599251 (2005) https://doi.org/10.1117/12.629042

KEYWORDS: Optical proximity correction, Photomasks, Data modeling, Back end of line, Semiconducting wafers, Visualization, Databases, Scanning electron microscopy, Data integration, Metals

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Proceedings Article | 8 November 2005 Paper

Paper

Model-based DRC for design and process integration

Chi-Yuan Hung, Andrew Jost, Qingwei Liu

Proceedings Volume 5992, 59923M (2005) https://doi.org/10.1117/12.631505

KEYWORDS: Optical proximity correction, Process modeling, Metals, Model-based design, Error analysis, Computer simulations, Design for manufacturability, Optics manufacturing, Data modeling, Lithography

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Proceedings Article | 8 November 2005 Paper

Paper

Model-based insertion and optimization of assist features with application to contact layers

Shumay Shang, Yuri Granik, Lisa Swallow, Li-guo Zhang, Travis Brist, Andres Torres, Chi-Yuan Hung, Qingwei Liu

Proceedings Volume 5992, 59921Y (2005) https://doi.org/10.1117/12.632345

KEYWORDS: SRAF, Photomasks, Model-based design, Source mask optimization, Optical proximity correction, Critical dimension metrology, Optimization (mathematics), Lithography, Semiconducting wafers, Scanning electron microscopy

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Proceedings Article | 28 June 2005 Paper

Paper

Lithography process related OPC development and verification demonstration on a sub-90nm poly layer

Chi-Yuan Hung, Qingwei Liu, Liguo Zhang, Shumay Shang, Andrew Jost

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617194

KEYWORDS: Process modeling, Optical proximity correction, Data modeling, Photomasks, Semiconducting wafers, Scanning electron microscopy, Calibration, Lithography, Wafer-level optics, Visualization

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Proceedings Article | 12 May 2005 Paper

Paper

A methodology to calibrate line-end gauge position for better modeling performance

Chi-Yuan Hung, Ching-Heng Wang, Qing-Wei Liu

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.597284

KEYWORDS: Data modeling, Semiconducting wafers, Photomasks, Calibration, Performance modeling, Mathematical modeling, Optical proximity correction, Process modeling, Etching, Physics

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Showing 5 of 31 publications

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