Prof. Diana L. Huffaker Profile

Prof. Diana L. Huffaker

at Univ of Texas at Arlington

SPIE Involvement:

Author | Editor

Publications (47)

Proceedings Article | 16 March 2023 Poster + Paper

Predicting the response of lead selenide thin film photoconductor in circuits with a series load resistor

Jasmine Mah, Khalifa Azizur-Rahman, Baolai Liang, Diana Huffaker, Jeung Hun Park, Stewart Miller, Richard Kim, Russell Dahl

Proceedings Volume 12422, 124220T (2023) https://doi.org/10.1117/12.2650998

KEYWORDS: Spectral response, Photoresistors, Resistance, Resistors, Amplifiers, Temperature metrology, Thin films, Diodes, Lead, Incident light

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Proceedings Article | 4 March 2022 Presentation + Paper

Comparison of the temperature dependence of impact ionization coefficients in AlAsSb, InAlAs, and InP

Xiao Jin, Shiyu Xie, Baolai Liang, Xin Yi, Harry Lewis, Leh Lim, Yifan Liu, Beng Koon Ng, Diana Huffaker, Chee Hing Tan, Duu Sheng Ong, John P. David

Proceedings Volume 11997, 119970B (2022) https://doi.org/10.1117/12.2609929

KEYWORDS: Ionization, Temperature metrology, Avalanche photodetectors, Diodes, Silicon, Scattering, Indium gallium arsenide, Phonons, Telecommunications, Semiconductor materials

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Proceedings Article | 13 October 2020 Presentation + Paper

Extremely low-noise avalanche photodiodes based on AlAs0.56Sb0.44

Xin Yi, Shiyu Xie, Baolai Liang, Leh W. Lim, Diana Huffaker, Chee H. Tan, John P. David

Proceedings Volume 11540, 115400M (2020) https://doi.org/10.1117/12.2573766

KEYWORDS: Avalanche photodiodes, Avalanche photodetectors, Ionization, Electrons, Indium gallium arsenide, Diodes, Photodetectors, Defense technologies, Telecommunications, Semiconductor materials

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Proceedings Article | 10 March 2020 Presentation

High-performance AlAs0.56Sb0.44 avalanche photodiodes (Conference Presentation)

Xin Yi, Shiyu Xie, Baolai Liang, Leh Lim, Mukul Debnath, Diana Huffaker, Chee Hing Tan, John P. David

Proceedings Volume 11276, 112760E (2020) https://doi.org/10.1117/12.2544956

KEYWORDS: Avalanche photodiodes, Ionization, Signal processing, Silicon, Indium gallium arsenide, Absorption, Telecommunications, Optical signal processing, Interference (communication), Avalanche photodetectors

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Proceedings Article | 12 September 2019 Presentation + Paper

Carrier and refractive index dynamics in core-shell nanolasers grown on silicon during spontaneous and stimulated emission

Tomasz Ochalski, Juan S. Morales, Shumithira Gandan, Diana Huffaker, Hyunseok Kim, Liam O'Faolain

Proceedings Volume 11081, 110812B (2019) https://doi.org/10.1117/12.2529494

KEYWORDS: Silicon, Refractive index, Indium gallium arsenide, Optoelectronics, Group III-V semiconductors, Nanostructures, Luminescence, Interfaces, Temperature metrology, Carrier dynamics

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Proceedings Article | 5 March 2019 Presentation

Bias-free telecommunication-compatible plasmonic photoconductive terahertz source (Conference Presentation)

Deniz Turan, Nezih Tolga Yardimci, Zixuan Rong, Dingkun Ren, Hyunseok Kim, Diana Huffaker, Mona Jarrahi

Proceedings Volume 10917, 109170Q (2019) https://doi.org/10.1117/12.2507410

KEYWORDS: Terahertz radiation, Terahertz sources, Plasmonics, Photoresistors, Terahertz spectroscopy, Telecommunications, Millimeter wave imaging, Imaging spectroscopy, Spectroscopy, Imaging systems

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Proceedings Article | 4 March 2019 Presentation

Type-II GaSb/InAlAs quantum dots grown on InP (001) substrate by droplet epitaxy (Conference Presentation)

Baolai Liang, Diana Huffaker, Yuriy Mazur, Morgan Ware, Gregory Salamo, Qing Yuan, Ying Wang, Xiaoli Li, Shufang Wang, Guangsheng Fu

Proceedings Volume 10929, 109290H (2019) https://doi.org/10.1117/12.2509207

KEYWORDS: Epitaxy, Quantum dots, Gallium antimonide, Solar cells, Physics, Carrier dynamics

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Proceedings Article | 1 February 2019 Paper

A comprehensive set of simulation tools to model and design high-performance Type-II InAs/GaSb superlattice infrared detectors

M. Delmas, B. Liang, D. Huffaker

Proceedings Volume 10926, 109260G (2019) https://doi.org/10.1117/12.2509480

KEYWORDS: Gallium antimonide, Indium arsenide, Superlattices, Long wavelength infrared, Infrared detectors, Diffusion, Mercury cadmium telluride

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Proceedings Article | 18 September 2018 Presentation

Selective-area nanowire photodetectors: from near to mid-wavelength infrared (Conference Presentation)

Diana Huffaker, Dingkun Ren, Khalifa M. Azizur-Rahman, Hyunseok Kim

Proceedings Volume 10729, 1072905 (2018) https://doi.org/10.1117/12.2502113

KEYWORDS: Infrared radiation, Nanowires, Mid-IR, Infrared photography, Photodetectors, Visible radiation, Photodiodes, Near infrared, Avalanche photodetectors, Short wave infrared radiation

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Proceedings Article | 14 March 2018 Presentation

Single-mode lasing in InGaAs nanopillars on SOI (Conference Presentation)

Juan Salvador Dominguez Morales, Hyunseok Kim , Shumithira Gandan, David Williams, Wook-Jae Lee, Diana Huffaker, Tomasz Ochalski

Proceedings Volume 10543, 1054304 (2018) https://doi.org/10.1117/12.2286320

KEYWORDS: Silicon, Indium gallium arsenide, Luminescence, Optoelectronics, Group III-V semiconductors, Nanostructures, Modes of laser operation, Interfaces, Singular optics, Carrier dynamics

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Proceedings Article | 14 March 2018 Presentation

Photoluminescence investigation for InAs quantum dots capped by GaAs1-xSbx layer with different Sb-composition (Conference Presentation)

Baolai Liang, Diana Huffaker, Yuriy Mazur, Morgan Ware, Gregory Salamo, Ying Wang, Qinglin Guo, Shufang Wang, Guangsheng Fu

Proceedings Volume 10543, 1054308 (2018) https://doi.org/10.1117/12.2290756

KEYWORDS: Indium arsenide, Quantum dots, Luminescence, Solar cells, Carrier dynamics, Structural engineering, Photovoltaics, Antimony, Instrument modeling, Nanowires

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Proceedings Article | 14 March 2018 Presentation

Plasmonic nanowire optical to terahertz converter operating at telecommunication wavelengths (Conference Presentation)

Diana Huffaker, Mona Jarrahi

Proceedings Volume 10531, 105310H (2018) https://doi.org/10.1117/12.2297247

KEYWORDS: Plasmonics, Nanowires, Telecommunications, Terahertz radiation, Integrated optics, Photons, Metals, Silicon

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Proceedings Article | 23 February 2018 Paper

Feasibility of room-temperature mid-wavelength infrared photodetectors using InAsSb nanostructured photoabsorbers

Dingkun Ren, Zixuan Rong, Cao Minh, Alan Farrell, Xiao Meng, Diana Huffaker

Proceedings Volume 10531, 105310Y (2018) https://doi.org/10.1117/12.2296791

KEYWORDS: Nanowires, Photodetectors, Indium arsenide, Absorption, Mid-IR, Sensors, Photodiodes, Plasmonics

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Proceedings Article | 21 February 2018 Paper

Numerical analysis of nanowire surface recombination using a three-dimensional transient model

Dingkun Ren, Zixuan Rong, Baolai Liang, Diana Huffaker

Proceedings Volume 10543, 1054306 (2018) https://doi.org/10.1117/12.2295768

KEYWORDS: Nanowires, 3D modeling, Indium gallium arsenide, Gallium arsenide, Finite-difference time-domain method, Numerical analysis, Interfaces, Nanostructuring, Computer simulations, Optical simulations

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Proceedings Article | 7 June 2017 Open Access

Axial InGaAs/GaAs nanowire separate absorption-multiplication avalanche photodetectors (Conference Presentation)

Diana Huffaker, Alan Farrell, Xiao Meng

Proceedings Volume 10193, 101930D (2017) https://doi.org/10.1117/12.2265851

KEYWORDS: Epitaxy, Avalanche photodetectors, Single photon, Sensors, Photodetectors, Indium gallium arsenide, Indium, Heterojunctions, Nanowires, Infrared sensors

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Proceedings Article | 8 May 2017 Paper

Modeling and spectroscopy of carrier relaxation in semiconductor optoelectronics

A. Scofield, A. Hudson, B. Liang, B. Juang, D. Huffaker, W. Lotshaw

Proceedings Volume 10193, 101930C (2017) https://doi.org/10.1117/12.2262807

KEYWORDS: Optoelectronic devices, Carrier dynamics, Luminescence, Optoelectronics, Time resolved spectroscopy, Gallium arsenide, Aluminum, Gallium antimonide, Doping, Spectroscopy, Excitons, Data modeling, Semiconductor optoelectronics

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Proceedings Article | 28 April 2017 Presentation

Optical characteristics of InAlAs/GaAlAs/GaAs quantum dots (Conference Presentation)

Baolai Liang, Diana Huffaker, Yuriy Mazur, Morgan Ware, Gregory Salamo, Linlin Su, Ying Wang, Qinglin Guo

Proceedings Volume 10114, 101140N (2017) https://doi.org/10.1117/12.2251605

KEYWORDS: Nanostructures, Current controlled current source, Quantum dots, Optical alignment, Optical properties

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Proceedings Article | 19 April 2017 Presentation

GaSb on GaAs solar cells Grown using interfacial misfit arrays (Conference Presentation)

George Nelson, Bor-Chau Juang, Michael Slocum, Zachary Bittner, Ramesh Babu Laghumavarapu, Diana Huffaker, Seth Hubbard

Proceedings Volume 10099, 1009904 (2017) https://doi.org/10.1117/12.2256426

KEYWORDS: Gallium antimonide, Gallium arsenide, Solar cells, Indium gallium arsenide, Interfaces, Molecular beam epitaxy, Spectroscopes, Physics, Photovoltaics, Current controlled current source

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Proceedings Article | 20 February 2017 Presentation + Paper

Optical spectroscopy of p-GaAs nanopillars on Si for monolithic integrated light sources

J. S. D. Morales, S. Gandan, D. Ren, Tomasz Ochalski, Diana Huffaker

Proceedings Volume 10114, 1011409 (2017) https://doi.org/10.1117/12.2252507

KEYWORDS: Signal attenuation, Silicon, Optical properties, Optical spectroscopy, Light sources, Silicon photonics, Nanostructures, Optoelectronics, Optical communications, Semiconductor lasers, Crystals, Gallium arsenide, Luminescence

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Proceedings Article | 13 May 2016 Paper

Spectroscopic diagnostics of defect and interface effects on carrier dynamics in semiconductor optoelectronics

A. Scofield, A. Hudson, B. Liang, N. Wells, D. Huffaker, W. Lotshaw

Proceedings Volume 9835, 98350F (2016) https://doi.org/10.1117/12.2224308

KEYWORDS: Diagnostics, Luminescence, Interfaces, Carrier dynamics, Heterojunctions, Gallium arsenide, Aluminum, Metalorganic chemical vapor deposition, Spectroscopy, Temperature metrology

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Proceedings Article | 4 June 2015 Paper

Nanopillar optical antenna nBn detectors for subwavelength infrared pixels

Chung Hong Hung, Pradeep Senanayake, Wook-Jae Lee, Alan Farrell, Nick Hsieh, Diana Huffaker

Proceedings Volume 9481, 948109 (2015) https://doi.org/10.1117/12.2177483

KEYWORDS: Photodetectors, Infrared radiation, Optical antennas, Quantum efficiency, Diffusion, Indium arsenide, Sensors, Plasmonics, Absorption, Infrared detectors

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Proceedings Article | 27 February 2015 Paper

Complex emission dynamics from InGaAs/GaAs core-shell nanopillars

Katarzyna Komolibus, Adam Scofield, Tomasz Ochalski, Bryan Kelleher, David Goulding, Diana Huffaker, Guillaume Huyet

Proceedings Volume 9373, 93730A (2015) https://doi.org/10.1117/12.2080269

KEYWORDS: Picosecond phenomena, Indium gallium arsenide, Indium, Luminescence, Gallium arsenide, Silicon photonics, Optical properties, Scanning electron microscopy, Silicon, Interfaces

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Proceedings Article | 30 May 2013 Paper

Direct-bandgap nanopillar photovoltaics based on patterned catalyst-free epitaxy

Giacomo Mariani, Diana Huffaker

Proceedings Volume 8725, 872510 (2013) https://doi.org/10.1117/12.2018125

KEYWORDS: Gallium arsenide, Absorption, Photovoltaics, Solar cells, Neptunium, External quantum efficiency, Epitaxy, Finite-difference time-domain method, Photons, Semiconductors

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Proceedings Article | 24 October 2012 Paper

Short-wave infrared GaInAsSb photodiodes grown on GaAs substrates

Andrew R. Marshall, Kalyan Nunna, Siew Li Tan, Charles Reyner, Baolai Liang, Anitha Jallipalli, John P. David, D. Huffaker

Proceedings Volume 8541, 85410F (2012) https://doi.org/10.1117/12.974765

KEYWORDS: Gallium indium arsenide antimonide phosphide, Photodiodes, Gallium antimonide, Gallium arsenide, Sensors, Short wave infrared radiation, Infrared radiation, Diodes, Infrared photography, Etching

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Proceedings Article | 18 February 2009 Paper

Photoluminescence investigation of InAs quantum dots incorporating DWELL structures on patterned and planar GaAs (100) substrate

B. Liang, P. S. Wong, B. V. Dorogan, J. Tatebayashi, A. Albrecht, H. Xiang, Yu. Mazur, G. Salamo, S. R. Brueck, D. Huffaker

Proceedings Volume 7224, 722409 (2009) https://doi.org/10.1117/12.809784

KEYWORDS: Quantum wells, Gallium arsenide, Indium gallium arsenide, Indium arsenide, Picosecond phenomena, Integration, Luminescence, Quantum dots, Temperature metrology, Scanning electron microscopy

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Proceedings Article | 14 February 2008 Paper

Interfacial misfit dislocation array based growth of III-Sb active regions on GaAs/AlGaAs DBRs for high-power 2 um VECSELs

G. Balakrishnan, T. J. Rotter, A. Jallipalli, L. R. Dawson, D. L. Huffaker

Proceedings Volume 6871, 687111 (2008) https://doi.org/10.1117/12.776256

KEYWORDS: Gallium arsenide, Gallium antimonide, Quantum wells, Transmission electron microscopy, Luminescence, Antimony, Laser applications, Interfaces, Diffraction, Optical pumping

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Proceedings Article | 5 February 2008 Paper

Monolithically integrated III-Sb based laser diodes grown on miscut Si substrates

J. Tatebayashi, A. Jallipalli, M. Kutty, S. Huang, N. Nuntawong, G. Balakrishnan, L. Dawson, D. Huffaker

Proceedings Volume 6909, 69090M (2008) https://doi.org/10.1117/12.775340

KEYWORDS: Silicon, Vertical cavity surface emitting lasers, Semiconductor lasers, Gallium antimonide, Quantum wells, Interfaces, Avalanche photodetectors, Gallium arsenide, Fiber optic communications, Aluminum

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Proceedings Article | 10 September 2007 Paper

Monolithically integrated III-Sb diode lasers on Si using interfacial misfit arrays

D. Huffaker, G. Balakrishnan, A. Jallipalli, M. Kutty, S. Huang, L. Dawson

Proceedings Volume 6775, 67750L (2007) https://doi.org/10.1117/12.737224

KEYWORDS: Silicon, Semiconductor lasers, Avalanche photodetectors, Gallium antimonide, Antimony, Quantum wells, Gallium, Aluminum, Transmission electron microscopy, Semiconducting wafers

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Proceedings Article | 7 March 2007 Paper

Growth and characterization of GaAs/InGaP heterostructure for semiconductor laser cooling

R. Laghumavarapu, N. Nuntawong, A. Albrecht, D. Huffaker

Proceedings Volume 6461, 64610M (2007) https://doi.org/10.1117/12.708337

KEYWORDS: Gallium arsenide, Indium gallium phosphide, Interfaces, Semiconductor lasers, Temperature metrology, Heterojunctions, Metalorganic chemical vapor deposition, X-ray diffraction, Gallium, Solids

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Proceedings Article | 7 February 2006 Paper

Strain-compensation in closely stacked quantum dot active regions grown by metal organic chemical vapor deposition

N. Nuntawong, J. Tatebayashi, P. Wong, Y. Xin, C. Hains, S. Huang, L. Lester, D. Huffaker

Proceedings Volume 6129, 61290E (2006) https://doi.org/10.1117/12.656492

KEYWORDS: Gallium arsenide, Indium, Indium arsenide, Metalorganic chemical vapor deposition, Gallium, Quantum dots, Atomic force microscopy, Indium gallium phosphide, Interfaces, Chemical species

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Proceedings Article | 18 June 2004 Paper

Energy distributions of carriers in quantum dot laser structures

Simon Osborne, Peter Blood, Peter Smowton, Julie Lutti, Y. Xin, Andreas Stintz, Diana Huffaker, Luke Lester

Proceedings Volume 5349, (2004) https://doi.org/10.1117/12.540314

KEYWORDS: Absorption, Waveguides, Quantum dot lasers, Indium arsenide, Quantum dots, Electrons, Physics, Semiconductor lasers, Transparency, Blood

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Proceedings Article | 1 July 2003 Paper

MOCVD-grown InAs/GaAs quantum dots

Diana Huffaker, S. Birudavolu

Proceedings Volume 4999, (2003) https://doi.org/10.1117/12.488041

KEYWORDS: Crystals, Indium arsenide, Electroluminescence, Gallium arsenide, Atomic force microscopy, Quantum dots, Metalorganic chemical vapor deposition, Gallium, Temperature metrology, Transmission electron microscopy

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Proceedings Article | 12 November 1999 Paper

Oxide-confined vertical-cavity surface-emitting lasers, quantum dots, and the Purcell effect: can scaling the mode size improve laser performance?

Dennis Deppe, Diana Huffaker, H. Huang, Luke Graham

Proceedings Volume 3896, (1999) https://doi.org/10.1117/12.370314

KEYWORDS: Vertical cavity surface emitting lasers, Optical microcavities, Modulation, Diffraction, Diffusion, Quantum dots, Oxides, Quantum wells, Waveguide modes, Scattering

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Proceedings Article | 11 November 1999 Paper

Oxide-confined vertical-cavity surface-emitting lasers, quantum dots, and the Purcell effect: can scaling the mode size improve laser performance?

Dennis Deppe, Diana Huffaker, H. Huang, Luke Graham

Proceedings Volume 3897, (1999) https://doi.org/10.1117/12.369306

KEYWORDS: Vertical cavity surface emitting lasers, Optical microcavities, Modulation, Diffraction, Diffusion, Quantum dots, Oxides, Quantum wells, Waveguide modes, Scattering

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Proceedings Article | 9 November 1999 Paper

Quantum dot active regions for extended-wavelength (1.0 um to 1.3 um) GaAs-based heterostructure lasers and vertical-cavity surface-emitting lasers

Diana Huffaker, Gyoungwon Park, Z. Zou, Oleg Shchekin, Dennis Deppe

Proceedings Volume 3899, (1999) https://doi.org/10.1117/12.369385

KEYWORDS: Laser damage threshold, Vertical cavity surface emitting lasers, Gallium arsenide, Continuous wave operation, Waveguides, Reflectivity, Pulsed laser operation, Quantum dots, Electroluminescence, Indium gallium arsenide

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Proceedings Article | 9 November 1999 Paper

Oxide-confined verticle-cavity surface-emitting lasers, quantum dots, and the Purcell effect: can scaling the mode size improve laser performance?

Dennis Deppe, Diana Huffaker, H. Huang, Luke Graham

Proceedings Volume 3899, (1999) https://doi.org/10.1117/12.369393

KEYWORDS: Vertical cavity surface emitting lasers, Optical microcavities, Modulation, Diffraction, Diffusion, Quantum dots, Oxides, Quantum wells, Active optics, Waveguide modes

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Proceedings Article | 4 November 1999 Paper

Oxide-confined vertical-cavity surface-emitting lasers, quantum dots, and the Purcell effect: can scaling the mode size improve laser performance?

Dennis Deppe, Diana Huffaker, H. Huang, Luke Graham

Proceedings Volume 3898, (1999) https://doi.org/10.1117/12.368480

KEYWORDS: Vertical cavity surface emitting lasers, Optical microcavities, Modulation, Diffraction, Diffusion, Quantum wells, Quantum dots, Oxides, Waveguide modes, Scattering

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Proceedings Article | 6 August 1999 Paper

Observation of enhanced spontaneous decay in 1-um-aperture microcavities with InGaAlAs quantum dot active regions

Luke Graham, Qing Deng, Sebastian Csutak, Diana Huffaker, Dennis Deppe

Proceedings Volume 3625, (1999) https://doi.org/10.1117/12.356887

KEYWORDS: Optical microcavities, Oxides, Quantum dots, Luminescence, Free space, Mirrors, Picosecond phenomena, Scattering, Vertical cavity surface emitting lasers, Waveguide modes

Proceedings Article | 7 July 1998 Paper

Quantum-dot active regions for extended-wavelength-range GaAs-based light-emitting devices

Diana Huffaker, Jeremy Schaub, Hongyu Deng, Dennis Deppe

Proceedings Volume 3283, (1998) https://doi.org/10.1117/12.316678

KEYWORDS: Gallium arsenide, Vertical cavity surface emitting lasers, Electroluminescence, Light emitting diodes, Gallium, Quantum dots, Oxides, Indium gallium arsenide, Crystals, Indium

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Proceedings Article | 27 January 1998 Paper

Native oxide technology for III-V optoelectronic devices

Dennis Deppe, Diana Huffaker

Proceedings Volume 10292, 1029209 (1998) https://doi.org/10.1117/12.300617

KEYWORDS: Oxides, Optoelectronic devices, Vertical cavity surface emitting lasers, Oxidation, Chemistry, Semiconductor lasers, Waveguides, Field effect transistors

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Proceedings Article | 22 December 1997 Paper

Resonant-cavity photodetectors: performance and functionality

Joe Campbell, J. Bean, Dennis Deppe, Diana Huffaker, Ben Streetman

Proceedings Volume 3290, (1997) https://doi.org/10.1117/12.298260

KEYWORDS: Photodiodes, Avalanche photodetectors, Mirrors, Silicon, Photodetectors, Absorption, Quantum efficiency, Gallium arsenide, Reflectivity, Quantum dots

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Proceedings Article | 6 June 1997 Paper

Lasing modes in highly confined semiconductor microcavities

Dennis Deppe, Diana Huffaker, Hongyu Deng, Tchang-Hun Oh, Qing Deng

Proceedings Volume 2994, (1997) https://doi.org/10.1117/12.275570

KEYWORDS: Optical microcavities, Vertical cavity surface emitting lasers, Oxides, Semiconductors, Dielectrics, Fabry–Perot interferometers, Gallium arsenide, Quantum dots, Laser damage threshold, Waveguide modes

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Proceedings Article | 4 April 1997 Paper

Effects of steam oxidation on a single In0.20Ga0.80As quantum well in a half-wave microcavity VCSEL

Luke Graham, Diana Huffaker, Tchang-Hun Oh, Dennis Deppe

Proceedings Volume 3003, (1997) https://doi.org/10.1117/12.271053

KEYWORDS: Quantum wells, Vertical cavity surface emitting lasers, Luminescence, Oxygen, Optical microcavities, Gallium arsenide, Oxides, Aluminum, Gallium, Oxidation

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Proceedings Article | 4 April 1997 Paper

Half-wave cavity vertical-cavity surface-emitting lasers with native oxide/GaAs lower distributed Bragg reflectors

Diana Huffaker, Dennis Deppe

Proceedings Volume 3003, (1997) https://doi.org/10.1117/12.271062

KEYWORDS: Vertical cavity surface emitting lasers, Oxides, Mirrors, Distributed Bragg reflectors, Reflectivity, Gallium arsenide, Laser damage threshold, Quantum wells, Optical microcavities, Oxidation

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Proceedings Article | 4 April 1997 Paper

Wafer-bonded AlGaInAs 1.3-um vertical-cavity surface-emitting lasers

Yi Qian, Zuhua Zhu, Yu-Hwa Lo, Hong Hou, B. Hammons, Diana Huffaker, Dennis Deppe, Wei Lin, Mingcheng Wang, Y. Yu

Proceedings Volume 3003, (1997) https://doi.org/10.1117/12.271063

KEYWORDS: Vertical cavity surface emitting lasers, Mirrors, Etching, Quantum wells, Dielectric mirrors, Interfaces, Indium gallium arsenide, Doping, Continuous wave operation, Reactive ion etching

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Proceedings Article | 24 June 1993 Paper

Performance issues related to dielectric stack reflectors for vertical-cavity surface-emitting lasers

Dennis Deppe, Diana Huffaker, Chun Lei

Proceedings Volume 1851, (1993) https://doi.org/10.1117/12.147592

KEYWORDS: Mirrors, Reflectors, Vertical cavity surface emitting lasers, Reflectivity, Dielectrics, Semiconductors, Gallium arsenide, Fabry–Perot interferometers, Silicon, Quantum wells

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Proceedings Article | 1 June 1991 Paper

Correlation of surface topography and coating damage with changes in the responsivity of silicon PIN photodiodes

Diana Huffaker, Rodger Walser, Michael Becker

Proceedings Volume 1441, (1991) https://doi.org/10.1117/12.57213

KEYWORDS: Photodiodes, Silicon, Reflectivity, Absorption, Laser induced damage, Antireflective coatings, Sensors, YAG lasers, Photons, Coating

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Showing 5 of 47 publications

Proceedings Volume Editor (17)

SPIE Conference Volume | 9 April 2020

Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII

SPIE Conference Volume | 7 June 2019

Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI

SPIE Conference Volume | 2 July 2018

Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV

SPIE Conference Volume | 17 May 2017

Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV

SPIE Conference Volume | 22 August 2016

Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII

Showing 5 of 17 publications

Conference Committee Involvement (24)

Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII

5 February 2020 | San Francisco, California, United States

Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI

6 February 2019 | San Francisco, California, United States

Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV

29 January 2018 | San Francisco, California, United States

Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV

30 January 2017 | San Francisco, California, United States

Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII

15 February 2016 | San Francisco, California, United States

Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII

9 February 2015 | San Francisco, California, United States

Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XI

3 February 2014 | San Francisco, California, United States

Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X

4 February 2013 | San Francisco, California, United States

Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling IX

24 January 2012 | San Francisco, California, United States

Independent Component Analyses, Wavelets, Neural Networks, Biosystems, and Nanoengineering IX

27 April 2011 | Orlando, Florida, United States

Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII

25 January 2011 | San Francisco, California, United States

Semiconductor Lasers and Laser Dynamics

12 April 2010 | Brussels, Belgium

Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII

24 January 2010 | San Francisco, California, United States

Quantum Dots, Particles, and Nanoclusters VI

25 January 2009 | San Jose, California, United States

Quantum Dots, Particles, and Nanoclusters V

21 January 2008 | San Jose, California, United States

Quantum Dots, Particles, and Nanoclusters IV

22 January 2007 | San Jose, California, United States

Quantum Dots, Particles, and Nanoclusters III

23 January 2006 | San Jose, California, United States

Vertical-Cavity Surface-Emitting Lasers IX

26 January 2005 | San Jose, California, United States

Quantum Dots, Nanoparticles, and Nanoclusters II

24 January 2005 | San Jose, California, United States

Vertical-Cavity Surface-Emitting Lasers VIII

28 January 2004 | San Jose, CA, United States

Quantum Dots, Nanoparticles, and Nanoclusters

26 January 2004 | San Jose, CA, United States

Photonics: Design, Technology, and Packaging

10 December 2003 | Perth, Australia

Vertical-Cavity Surface-Emitting Lasers VII

29 January 2003 | San Jose, CA, United States

VCSELs and Optical Interconnects

30 October 2002 | Bruges, Belgium

Showing 5 of 24 Conference Committees

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