Dr. Hiroaki Morimoto Profile

Dr. Hiroaki Morimoto

Manager/Meister at Toppan Printing

SPIE Involvement:

Author

Publications (39)

Proceedings Article | 17 October 2014 Paper

Black border, mask 3D effects: covering challenges of EUV mask architecture for 22nm node and beyond

Natalia Davydova, Eelco van Setten, Robert de Kruif, Brid Connolly, Norihito Fukugami, Yutaka Kodera, Hiroaki Morimoto, Yo Sakata, Jun Kotani, Shinpei Kondo, Tomohiro Imoto, Haiko Rolff, Albrecht Ullrich, Ramasubramanian Kottumakulal Jaganatharaja, Ad Lammers, Dorothe Oorschot, Cheuk-Wah Man, Guido Schiffelers, Joep van Dijk

Proceedings Volume 9231, 923102 (2014) https://doi.org/10.1117/12.2066299

KEYWORDS: Deep ultraviolet, Reflectivity, Extreme ultraviolet, Photomasks, Reticles, Scanners, Aluminum, Extreme ultraviolet lithography, Atomic force microscopy, Semiconducting wafers

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Proceedings Article | 28 July 2014 Paper

Achievements and challenges of EUV mask imaging

Proceedings Volume 9256, 925602 (2014) https://doi.org/10.1117/12.2072945

KEYWORDS: Reticles, Photomasks, Extreme ultraviolet, Semiconducting wafers, Reflectivity, 3D metrology, Deep ultraviolet, Neodymium, Atomic force microscopy, Scanners

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Proceedings Article | 3 October 2013 Paper

Impact of an etched EUV mask black border on imaging: part II

Natalia Davydova, Robert de Kruif, Hiroaki Morimoto, Yo Sakata, Jun Kotani, Norihito Fukugami, Shinpei Kondo, Tomohiro Imoto, Brid Connolly, Dries van Gestel, Dorothe Oorschot, David Rio, John Zimmerman, Noreen Harned

Proceedings Volume 8880, 888027 (2013) https://doi.org/10.1117/12.2027596

KEYWORDS: Deep ultraviolet, Reflectivity, Reticles, Extreme ultraviolet, Semiconducting wafers, Scanners, Extreme ultraviolet lithography, Photomasks, Optical proximity correction, Aluminum

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Proceedings Article | 8 November 2012 Paper

Impact of mask CDU and local CD variation on intra-field CDU

Junji Miyazaki, Orion Mouraille, Jo Finders, Masaru Higuchi, Yosuke Kojima, Shunsuke Sato, Hiroaki Morimoto

Proceedings Volume 8522, 85220E (2012) https://doi.org/10.1117/12.970523

KEYWORDS: Photomasks, Semiconducting wafers, Critical dimension metrology, Scanning electron microscopy, Lithography, Photoresist processing, Reticles, Metrology, Radium, Semiconductors

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Proceedings Article | 30 June 2012 Paper

Black border with etched multilayer on EUV mask

Norihito Fukugami, Kazuaki Matsui, Genta Watanabe, Takeshi Isogawa, Shinpei Kondo, Yutaka Kodera, Yo Sakata, Shinji Akima, Jun Kotani, Hiroaki Morimoto, Tsuyoshi Tanaka

Proceedings Volume 8441, 84411K (2012) https://doi.org/10.1117/12.965536

KEYWORDS: Extreme ultraviolet, Reflectivity, Photomasks, Semiconducting wafers, Deep ultraviolet, Etching, Manufacturing, Inspection, Extreme ultraviolet lithography, Image processing

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Proceedings Article | 20 May 2006 Paper

Sulfate-free photomask cleaning technology

Shingo Anzai, Noriaki Takagi, Tomoaki Kamiyama, Naotoshi Kawaguchi, Mikio Ishijima, Toshimitsu Watanabe, Hiroaki Morimoto, Tsuneaki Kuwajima, Makito Nakatsu, Shin-ichi Hasegawa

Proceedings Volume 6283, 62830B (2006) https://doi.org/10.1117/12.681737

KEYWORDS: Ozone, Photomasks, Air contamination, Photoresist processing, Mask cleaning, Transmittance, Signal attenuation, Contamination, Visualization, Halftones

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Proceedings Article | 14 September 2001 Paper

Investigation of attenuated phase-shifting mask material for 157-nm lithography

Toshio Onodera, Takahiro Matsuo, Toshiro Itani, Hiroaki Morimoto

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435642

KEYWORDS: Transmittance, Photomasks, Lithography, Chromium, Tantalum, Phase shifts, Atrial fibrillation, Etching, Thin films, Resolution enhancement technologies

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Proceedings Article | 5 September 2001 Paper

Advanced FIB mask repair technology for ArF lithography: III

Ryoji Hagiwara, Anto Yasaka, Osamu Takaoka, Tomokazu Kozakai, S. Yabe, Yoshihiro Koyama, Masashi Muramatsu, Toshio Doi, Kenji Suzuki, Mamoru Okabe, Kazuo Aita, Tatsuya Adachi, Shinji Kubo, Nobuyuki Yoshioka, Hiroaki Morimoto, Yasutaka Morikawa, Kazuya Iwase, Naoya Hayashi

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438373

KEYWORDS: Photomasks, Imaging systems, Prototyping, Lithography, Ions, Opacity, Semiconductors, 193nm lithography, Transmittance, Manufacturing

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Proceedings Article | 22 January 2001 Paper

Advanced FIB mask repair technology for ArF lithography: II

Shinji Kubo, Koji Hiruta, Hiroaki Morimoto, Anto Yasaka, Ryoji Hagiwara, Tatsuya Adachi, Yasutaka Morikawa, Kazuya Iwase, Naoya Hayashi

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410689

KEYWORDS: Photomasks, Opacity, Ions, Transmittance, Lithography, Carbon, Ion beams, Etching, Semiconducting wafers, Phase shifts

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Proceedings Article | 22 January 2001 Paper

Materials for an attenuated phase-shifting mask in 157-nm lithography

Takahiro Matsuo, Toshio Onodera, Toshiro Itani, Hiroaki Morimoto, Takashi Haraguchi, Koichiro Kanayama, Tadashi Matsuo, Masao Otaki

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410703

KEYWORDS: Transmittance, Chromium, Laser irradiation, Atrial fibrillation, Vacuum ultraviolet, Phase shifts, Photomasks, Lithography, Defect inspection, Quartz

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Proceedings Article | 22 January 2001 Paper

Evaluation of loading effect of NLD dry etching: II

Tatsuya Fujisawa, Takayuki Iwamatsu, Koji Hiruta, Hiroaki Morimoto, Noriyuki Harashima, Takaei Sasaki, Mutsumi Hara, Kazuhide Yamashiro, Yasushi Okubo, Yoichi Takehana

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410736

KEYWORDS: Etching, Dry etching, Plasma, Photoresist processing, Critical dimension metrology, Antennas, Optical proximity correction, Magnetism, Quartz, Semiconductors

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Proceedings Article | 22 January 2001 Paper

Requirements for reticle and reticle material for 157-nm lithography: requirements for hard pellicle

Junji Miyazaki, Toshiro Itani, Hiroaki Morimoto

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410718

KEYWORDS: Pellicles, Monochromatic aberrations, Distortion, Lithography, Reticles, Particles, Inspection, Tolerancing, Silica, Projection systems

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Proceedings Article | 19 July 2000 Paper

CrOxFy as a material for attenuated phase-shift masks in ArF lithography

Keisuke Nakazawa, Takahiro Matsuo, Toshio Onodera, Hiroaki Morimoto, Hiroshi Mohri, Chiaki Hatsuta, Naoya Hayashi

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392100

KEYWORDS: Transmittance, Photomasks, Phase shifts, Lithography, Annealing, Excimer lasers, Interfaces, Fluorine, X-rays, Chromium

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Proceedings Article | 19 July 2000 Paper

Proximity effect correction for reticle fabrication

Masao Sugiyama, Shinji Kubo, Koji Hiruta, Takayuki Iwamatsu, Tatsuya Fujisawa, Hiroaki Morimoto

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392056

KEYWORDS: Reticles, Photomasks, Electron beams, Beam shaping, Dry etching, Etching, Backscatter, Scanning electron microscopy, Chemically amplified resists, Coating

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Proceedings Article | 19 July 2000 Paper

Evaluation of loading effect of NLD dry etching

Takayuki Iwamatsu, Tatsuya Fujisawa, Koji Hiruta, Hiroaki Morimoto, Noriyuki Harashima, Takaei Sasaki, Mutsumi Hara, Kazuhide Yamashiro, Yasushi Okubo, Yoichi Takehana

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392060

KEYWORDS: Etching, Dry etching, Photomasks, Critical dimension metrology, Scanning electron microscopy, Mask making, Plasma, Photoresist processing, Plasma etching, Chromium

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Proceedings Article | 19 July 2000 Paper

Advanced FIB mask repair technology in ArF lithography

Koji Hiruta, Shinji Kubo, Hiroaki Morimoto, Anto Yasaka, Ryoji Hagiwara, Tatsuya Adachi, Yasutaka Morikawa, Kazuya Iwase, Naoya Hayashi

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392089

KEYWORDS: Carbon, Photomasks, Transmittance, Semiconducting wafers, Atomic force microscopy, Ion beams, Laser irradiation, Opacity, Lithography, Ions

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Proceedings Article | 5 July 2000 Paper

Feasibility study of an embedded transparent phase-shifting mask in ArF lithography

Takahiro Matsuo, Tohru Ogawa, Hiroaki Morimoto

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389033

KEYWORDS: Photomasks, Phase shifts, Lithography, Logic devices, Resolution enhancement technologies, Lithographic illumination, Opacity, Binary data, Scanning electron microscopy

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Proceedings Article | 23 June 2000 Paper

Study of bilayer negative-tone silylation process for 193-nm lithography

Hiroyuki Watanabe, Isao Satou, Masayuki Endo, Hiroaki Morimoto

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388261

KEYWORDS: Lithography, Etching, Scanning electron microscopy, Line edge roughness, Photoresist processing, Resolution enhancement technologies, Silicon, Photography, Chemical species, Fabrication

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Proceedings Article | 23 June 2000 Paper

Temperature dependence of acid molecular diffusion in resist polymer films simulated by molecular dynamics

Minoru Toriumi, Ichiro Okabe, Takeshi Ohfuji, Masayuki Endo, Hiroaki Morimoto

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388269

KEYWORDS: Diffusion, Polymers, Polymethylmethacrylate, Molecules, Polymer thin films, Chemically amplified resists, Molecular interactions, Chemical species, Matrices, Chemical analysis

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Proceedings Article | 30 December 1999 Paper

Evaluation of an advanced mask-writing system: II

Shinji Kubo, Koji Hiruta, Masao Sugiyama, Takayuki Iwamatsu, Tatsuya Fujisawa, Hiroaki Morimoto

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373292

KEYWORDS: Photomasks, Electron beams, Scanning electron microscopy, Reticles, Beam shaping, Photoresist processing, Semiconductors, Chemically amplified resists, Lithography, Metrology

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Proceedings Article | 30 December 1999 Paper

ZrSiO: a new and robust material for attenuated phase-shift mask in ArF lithography

Toshio Onodera, Takahiro Matsuo, Keisuke Nakazawa, Junji Miyazaki, Tohru Ogawa, Hiroaki Morimoto, Takashi Haraguchi, Nobuhiko Fukuhara, Tadashi Matsuo, Masao Otaki, Susumu Takeuchi

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373329

KEYWORDS: Lithographic illumination, Resolution enhancement technologies, Photomasks, Lithography, Reticles, Transmittance, Critical dimension metrology, Silicon films, Semiconducting wafers, Oxygen

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Proceedings Article | 30 December 1999 Paper

Advanced mask technology for 230-mm reticle fabrication

Koji Hiruta, Shinji Kubo, Takayuki Iwamatsu, Tatsuya Fujisawa, Masao Sugiyama, Hiroaki Morimoto

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373294

KEYWORDS: Reticles, Photomasks, Manufacturing, Manufacturing equipment, Glasses, Semiconductors, Chromium, Quartz, Dry etching, Plasma

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Proceedings Article | 25 August 1999 Paper

Evaluation of NLD mask dry etching system

Tatsuya Fujisawa, Takayuki Iwamatsu, Koji Hiruta, Hiroaki Morimoto, Takaei Sasaki, Kazuhide Yamashiro

Proceedings Volume 3748, (1999) https://doi.org/10.1117/12.360255

KEYWORDS: Etching, Dry etching, Plasma, Photomasks, Magnetism, Plasma systems, Antennas, Prototyping, Scanning electron microscopy, Chlorine

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Proceedings Article | 25 August 1999 Paper

Evaluation of an advanced mask-writing system

Shinji Kubo, Koji Hiruta, Masao Sugiyama, Takayuki Iwamatsu, Tatsuya Fujisawa, Hiroaki Morimoto

Proceedings Volume 3748, (1999) https://doi.org/10.1117/12.360221

KEYWORDS: Photomasks, Beam shaping, Electron beams, Scanning electron microscopy, Optical proximity correction, Reticles, Chemically amplified resists, Photoresist processing, Lithography, Antireflective coatings

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Proceedings Article | 11 June 1999 Paper

Theoretical analysis of line-edge roughness using FFT techniques

Takeshi Ohfuji, Masayuki Endo, Hiroaki Morimoto

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350261

KEYWORDS: Monte Carlo methods, Photoresist processing, Quantitative analysis, Fourier transforms, Polymers, Data conversion, Edge roughness, Chemically amplified resists, Scanning electron microscopy, Binary data

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Proceedings Article | 11 June 1999 Paper

Analysis of molecular diffusion in resist polymer films simulated by molecular dynamics

Minoru Toriumi, Takeshi Ohfuji, Masayuki Endo, Hiroaki Morimoto

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350220

KEYWORDS: Diffusion, Polymers, Chemical species, Molecules, Oxygen, Molecular interactions, Hydrogen, Polymer thin films, Polymethylmethacrylate, Chemically amplified resists

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Proceedings Article | 11 June 1999 Paper

Process margin in ArF lithography considering process window distortion

Ichiro Okabe, Takeshi Ohfuji, Masayuki Endo, Hiroaki Morimoto

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350271

KEYWORDS: Transparency, Lithography, Reflectivity, Photoresist processing, Distortion, Silicon, 193nm lithography, Resolution enhancement technologies, Bottom antireflective coatings, Refractive index

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Proceedings Article | 11 June 1999 Paper

Bilayer silylation process for 193-nm lithography

Isao Satou, Koichi Kuhara, Masayuki Endo, Hiroaki Morimoto

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350208

KEYWORDS: Photoresist processing, Etching, Lithography, Line edge roughness, Optical lithography, Fabrication, Scanning electron microscopy, Image processing, Resolution enhancement technologies, Silicon

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Proceedings Article | 18 December 1998 Paper

CD guarantee for the next-generation photomasks with CD-SEM

Takayuki Iwamatsu, Koji Hiruta, Hiroaki Morimoto, Masashi Ataka, Jun Nitta

Proceedings Volume 3546, (1998) https://doi.org/10.1117/12.332868

KEYWORDS: Chromium, Contamination, Photomasks, Critical dimension metrology, Scanning electron microscopy, Quartz, Reticles, Optics manufacturing, Electron beams, Holons

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Proceedings Article | 1 September 1998 Paper

Present status of ArF lithography development and mask technology

Hiroaki Morimoto, Hiroshi Ohtsuka

Proceedings Volume 3412, (1998) https://doi.org/10.1117/12.328844

KEYWORDS: Photomasks, Lithography, Defect inspection, Optical proximity correction, Scanners, Photoresist processing, Resolution enhancement technologies, Photomask technology, Chemically amplified resists, Yield improvement

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Proceedings Article | 12 February 1997 Paper

Next-generation mask strategy: are technologies ready for mass production of 256 MDRAM? Summary of Photomask Japan '97 Panel Discussion

Hiroaki Morimoto, Naoya Hayashi, Hideaki Hamada

Proceedings Volume 3236, (1997) https://doi.org/10.1117/12.301189

KEYWORDS: Photomasks, Optical proximity correction, Defect inspection, Phase shifts, Etching, Printing, Lithography, Error analysis, Inspection, Optical lithography

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Proceedings Article | 8 December 1995 Paper

Next-generation mask strategy: accuracy and mask-size survey and discussion results at PMJ '95 rump session

Yoshihiro Todokoro, Hiroaki Morimoto

Proceedings Volume 2621, (1995) https://doi.org/10.1117/12.228173

KEYWORDS: Photomasks, Lithography, Mask making, Etching, Photoresist processing, Optical lithography, Error analysis, Electron beam lithography, Electronics, Printing

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Proceedings Article | 3 July 1995 Paper

ZEP resist process for high-accuracy photomask with a dry-etching capability

Hideki Tarumoto, Kazuyuki Maetoko, Sakae Yamashita, Satoshi Aoyama, Hiroaki Morimoto

Proceedings Volume 2512, (1995) https://doi.org/10.1117/12.212779

KEYWORDS: Photoresist processing, Reticles, Photomasks, Chromium, Etching, Polymers, Dry etching, Control systems, Beam controllers, Quartz

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Proceedings Article | 3 July 1995 Paper

248-nm DUV MoSiON embedded phase-shifting mask for 0.25 micrometer lithography

Giang Dao, Gang Liu, Robert Hainsey, Jeff Farnsworth, Yasuo Tokoro, Susumu Kawada, Tsuneo Yamamoto, Nobuyuki Yoshioka, Akira Chiba, Hiroaki Morimoto

Proceedings Volume 2512, (1995) https://doi.org/10.1117/12.212781

KEYWORDS: Etching, Photomasks, Deep ultraviolet, Lithography, Reticles, Inspection, Phase shifts, Resistance, Semiconducting wafers, Dry etching

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Proceedings Article | 3 November 1994 Paper

Phase measurement system with transmitted UV light for phase-shifting mask inspection

Haruhiko Kusunose, Hiroyuki Nakae, Junji Miyazaki, Nobuyuki Yoshioka, Hiroaki Morimoto, Keiichi Murayama, Katsuhiro Tsukamoto

Proceedings Volume 2254, (1994) https://doi.org/10.1117/12.191941

KEYWORDS: Phase shifts, Phase measurement, Photomasks, Semiconducting wafers, Quartz, Inspection, Shearing interferometers, Transmittance, Microscopes, Refractive index

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Proceedings Article | 17 May 1994 Paper

Attenuated phase-shifting mask with a single-layer absorptive shifter of CrO, CrON, MoSiO, and MoSiON film

Masayuki Nakajima, Nobuyuki Yoshioka, Junji Miyazaki, Haruhiko Kusunose, Kunihiro Hosono, Hiroaki Morimoto, Wataru Wakamiya, Keiichi Murayama, Yaichiro Watakabe, Katsuhiro Tsukamoto

Proceedings Volume 2197, (1994) https://doi.org/10.1117/12.175405

KEYWORDS: Photomasks, Phase shifts, Lithography, Etching, Transmittance, Excimer lasers, Semiconducting wafers, Sputter deposition, Mask making, Molybdenum

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Proceedings Article | 15 September 1993 Paper

Study on the over-top-coating suppressing surface insoluble layer generation for chemical amplification resist

Teruhiko Kumada, Youko Tanaka, Akemi Ueyama, Shigeru Kubota, Hiroshi Koezuka, Tetsuro Hanawa, Hiroaki Morimoto

Proceedings Volume 1925, (1993) https://doi.org/10.1117/12.154764

KEYWORDS: Coating, Polymers, Natural surfaces, Diffusion, Excimer lasers, Water, Chemical species, Photoresist processing, X-rays, Photoemission spectroscopy

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Proceedings Article | 8 August 1993 Paper

Effect of duty ratio of line and space in phase-shifting lithography

Junji Miyazaki, Atsumi Yamaguchi, Keiji Fujiwara, Nobuyuki Yoshioka, Hiroaki Morimoto, Katsuhiro Tsukamoto

Proceedings Volume 1927, (1993) https://doi.org/10.1117/12.150462

KEYWORDS: Phase shifts, Photomasks, Lithography, Optical lithography, Computer aided design, Projection systems, Lithographic illumination, Diffractive optical elements, Manufacturing

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Proceedings Article | 1 May 1990 Paper

Gate oxide breakdown by focused ion-beam irradiation

Yuichi Nakashima, Hiroaki Morimoto, Hirohisa Yamamoto, Susumu Kato, Yaichiro Watakabe, Akihiko Yasuoka

Proceedings Volume 1263, (1990) https://doi.org/10.1117/12.20145

KEYWORDS: Oxides, Ion beams, X-ray technology, Molybdenum, Electrodes, Dielectric breakdown, Gallium, Ions, Silicon, X-ray lithography

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Dielectric breakdown of gate oxide by the focused iou beam (FIB) irradiation of the MOS structure has been studied. The sample device structure was that of an MOS transistor about to be ion-implanted in the source and drain (S/D) regions. The gate poly-silicon electrode was extended to the pad electrode on the thick field oxide. The thicknesses of the gate and field oxide layers were 25 iim and 500 mu, respectively. That of the poly-silicon layer was 250 nm. The typical areas of the gate and the pad electrodes were 31-100 jzm2 aiid 2-4x iO pm2, respectively. Gallium FIB, accelerated by 40 keV, was irradiated to sample devices. The total dose until the breakdowii depends on the irradiated location of the device. In the case that the edge of the polysilicon layer adjacent to the S/D regions is irradiated, the dose is the least. If the gate oxide layer has not been removed on the S/D regions, the dose exceeds that for the sample with the gate oxide layer etched there, although not greater than that in the case that any other part of the poly-silicon layer is irradiated. The electroluminescence measurement of some samples indicates that such edge irradiation iiiduces damages at a spot on the irradiated edge of the gate oxide. Such damages are probably due to the combiiiation of conductive microbridge formation and the electrical dielectric breakdown around the bridge. The microbridge is formed by the implantation of gallium ions, and/or adhesion of gallium and silicon atonis at the sidewall of the gate oxide. In the experiments where an area around the center of the polysilicon pad electrode was irradiated, two breakdown modes were observed: breakdown due to gate-culTent stress and instant breakdown. The gate potential during the FIB irradiation was obtained from the measured secondary electron current. The potential is approximately equal to that measured during the conventional constant-current-stress (005) lifetime experiment. This proves that gate oxide is stressed by current during irradiation. The time to breakdown becomes shorter with decrease in the gate area if the FIB current is the same. The smaller the devise becomes, the 005-like mode will be the more serious. Instant breakdown mode appears when the beam current is high. Detailed analysis reveals discrepancies between the phenomena and simple conjectures based on the 005 lifetime. By the irradiation, some samples are broken in far shorter time than expected from the 005 lifetime measurement, whereas the rest of the samples survive longer than the expectation. This suggests that there is a stronger stress at the onset of the irradiation. This breakdown mode is, at least at present, uncontrollable and most hazardous, to be overcome for improved

Showing 5 of 39 publications

Proceedings Volume Editor (4)

SPIE Conference Volume | 10 May 2007

Photomask and Next-Generation Lithography Mask Technology XIV

SPIE Conference Volume | 20 August 2004

Photomask and Next-Generation Lithography Mask Technology XI

SPIE Conference Volume | 19 July 2000

Photomask and Next-Generation Lithography Mask Technology VII

SPIE Conference Volume | 25 August 1999

Photomask and X-Ray Mask Technology VI

Conference Committee Involvement (17)

Extreme Ultraviolet (EUV) Lithography XII

22 February 2021 | Online Only, California, United States

Extreme Ultraviolet (EUV) Lithography XI

24 February 2020 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography X

25 February 2019 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography IX

26 February 2018 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography VIII

27 February 2017 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography VII

22 February 2016 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography VI

23 February 2015 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography V

24 February 2014 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography IV

25 February 2013 | San Jose, California, United States

Extreme Ultraviolet (EUV) Lithography III

13 February 2012 | San Jose, California, United States

Photomask and Next Generation Lithography Mask Technology XIV

17 April 2007 | Yokohama, Japan

Photomask and Next Generation Lithography Mask Technology XIII

18 April 2006 | Yokohama, Japan

Photomask and Next-Generation Lithography Mask Technology XI

14 April 2004 | Yokohama, Japan

Photomask and NGL Mask Technology X

16 April 2003 | Yokohama, Japan

Photomask and Next Generation Lithography Mask Technology VII

12 April 2000 | Kanagawa, Japan

Photomask and X-Ray Mask Technology VI

13 April 1999 | Yokohama, Japan

Symposium on Photomask and X-Ray Mask Technology

18 April 1996 | Kawasaki City, Japan

Showing 5 of 17 Conference Committees

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